MTB12N03J3 Specs and Replacement

Type Designator: MTB12N03J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO-252

MTB12N03J3 substitution

- MOSFET ⓘ Cross-Reference Search

 

MTB12N03J3 datasheet

 ..1. Size:280K  cystek
 mtb12n03j3.pdf pdf_icon

MTB12N03J3

Spec. No. C730J3 Issued Date 2011.03.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB12N03J3 ID 40A 8.5m (typ.) RDSON@VGS=10V, ID=15A 13.5m (typ.) RDSON@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynam... See More ⇒

 6.1. Size:319K  cystek
 mtb12n03q8.pdf pdf_icon

MTB12N03J3

Spec. No. C730Q8 Issued Date 2009.07.02 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/8 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB12N03Q8 ID 12A RDSON(max) 11.5m Description The MTB12N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o... See More ⇒

 7.1. Size:295K  cystek
 mtb12n04j3.pdf pdf_icon

MTB12N03J3

Spec. No. C450J3 Issued Date 2009.03.13 CYStech Electronics Corp. Revised Date 2010.05.17 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 40V ID 30A MTB12N04J3 RDS(ON) 12m Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol Outline MTB12N0... See More ⇒

 9.1. Size:393K  cystek
 mtb12p06j3.pdf pdf_icon

MTB12N03J3

Spec. No. C584J3 Issued Date 2014.07.20 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB12P06J3 ID -70A RDS(ON)@VGS=-10V, ID=-20A 10.2m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 11.9m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package ... See More ⇒

SHOW MORE

Detailed specifications: MTB09N04H8, MTB09N06J3, MTB09N06Q8, MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, 2SK3878, MTB12N03Q8, MTB12N04J3, MTB12P04J3, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8, MTB15P04J3

Keywords - MTB12N03J3 MOSFET specs

 MTB12N03J3 cross reference

 MTB12N03J3 equivalent finder

 MTB12N03J3 pdf lookup

 MTB12N03J3 substitution

 MTB12N03J3 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility