MTB12P04J3 Specs and Replacement

Type Designator: MTB12P04J3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 1330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: TO-252

MTB12P04J3 substitution

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MTB12P04J3 datasheet

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MTB12P04J3

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 mtb12p06j3.pdf pdf_icon

MTB12P04J3

Spec. No. C584J3 Issued Date 2014.07.20 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -60V MTB12P06J3 ID -70A RDS(ON)@VGS=-10V, ID=-20A 10.2m (typ) RDS(ON)@VGS=-4.5V, ID=-20A 11.9m (typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package ... See More ⇒

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MTB12P04J3

Spec. No. C450J3 Issued Date 2009.03.13 CYStech Electronics Corp. Revised Date 2010.05.17 Page No. 1/7 N-Channel Enhancement Mode Power MOSFET BVDSS 40V ID 30A MTB12N04J3 RDS(ON) 12m Features Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package & Halogen-free package Symbol Outline MTB12N0... See More ⇒

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 mtb12n03j3.pdf pdf_icon

MTB12P04J3

Spec. No. C730J3 Issued Date 2011.03.04 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30V MTB12N03J3 ID 40A 8.5m (typ.) RDSON@VGS=10V, ID=15A 13.5m (typ.) RDSON@VGS=4.5V, ID=10A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynam... See More ⇒

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Detailed specifications: MTB09P03J3, MTB110P10E3, MTB110P10F3, MTB110P10J3, MTB11N03Q8, MTB12N03J3, MTB12N03Q8, MTB12N04J3, IRF9540N, MTB12P06J3, MTB13N03Q8, MTB14A03V8, MTB14P03Q8, MTB15P04J3, MTB16P04J3, MTB17A03Q8, MTB17A03V8

Keywords - MTB12P04J3 MOSFET specs

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