All MOSFET. MTB1D7N03ATH8 Datasheet

 

MTB1D7N03ATH8 Datasheet and Replacement


   Type Designator: MTB1D7N03ATH8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 935 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: DFN5X6
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MTB1D7N03ATH8 Datasheet (PDF)

 ..1. Size:420K  cystek
 mtb1d7n03ath8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. : C948H8 Issued Date : 2014.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8BVDSS 30VID @VGS=10V 90ARDS(ON)@VGS=10V, ID=30A 1.5 m(typ)Features RDS(ON)@VGS=4.5V, ID=20A 2.1 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic

 5.1. Size:356K  cystek
 mtb1d7n03e3.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. : C948E3 Issued Date : 2014.03.05 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB1D7N03E3 ID @VGS=10V 203A2m RDSON(TYP) @ VGS=10V, ID=30A 2.6m RDSON(TYP) @ VGS=4.5V, ID=20A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant pac

 9.1. Size:840K  1
 mtb1d0n03rh8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. : C012H8 Issued Date : 2018.07.19 CYStech Electronics Corp. Revised Date : 2019.01.03 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25C(silicon limit) 200A ID@VGS=10V, TC=25C(package limit) 84A ID@VGS=10V, TA=25C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.

 9.2. Size:840K  cystek
 mtb1d0n03rh8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. : C012H8 Issued Date : 2018.07.19 CYStech Electronics Corp. Revised Date : 2019.01.03 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25C(silicon limit) 200A ID@VGS=10V, TC=25C(package limit) 84A ID@VGS=10V, TA=25C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.

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