MTB1D7N03ATH8 Specs and Replacement

Type Designator: MTB1D7N03ATH8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 935 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: DFN5X6

MTB1D7N03ATH8 substitution

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MTB1D7N03ATH8 datasheet

 ..1. Size:420K  cystek
 mtb1d7n03ath8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. C948H8 Issued Date 2014.06.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8 BVDSS 30V ID @VGS=10V 90A RDS(ON)@VGS=10V, ID=30A 1.5 m (typ) Features RDS(ON)@VGS=4.5V, ID=20A 2.1 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic... See More ⇒

 5.1. Size:356K  cystek
 mtb1d7n03e3.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. C948E3 Issued Date 2014.03.05 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB1D7N03E3 ID @VGS=10V 203A 2m RDSON(TYP) @ VGS=10V, ID=30A 2.6m RDSON(TYP) @ VGS=4.5V, ID=20A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant pac... See More ⇒

 9.1. Size:840K  1
 mtb1d0n03rh8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. C012H8 Issued Date 2018.07.19 CYStech Electronics Corp. Revised Date 2019.01.03 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25 C(silicon limit) 200A ID@VGS=10V, TC=25 C(package limit) 84A ID@VGS=10V, TA=25 C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.... See More ⇒

 9.2. Size:840K  cystek
 mtb1d0n03rh8.pdf pdf_icon

MTB1D7N03ATH8

Spec. No. C012H8 Issued Date 2018.07.19 CYStech Electronics Corp. Revised Date 2019.01.03 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25 C(silicon limit) 200A ID@VGS=10V, TC=25 C(package limit) 84A ID@VGS=10V, TA=25 C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.... See More ⇒

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Detailed specifications: MTB13N03Q8, MTB14A03V8, MTB14P03Q8, MTB15P04J3, MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, 13N50, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8, MTB20C03J4, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3

Keywords - MTB1D7N03ATH8 MOSFET specs

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