MTB20C03J4 Specs and Replacement

Type Designator: MTB20C03J4

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8(7) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7(10) nS

Cossⓘ - Output Capacitance: 78(135) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013(0.021) Ohm

Package: TO-252-4L

MTB20C03J4 substitution

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MTB20C03J4 datasheet

 ..1. Size:356K  cystek
mtb20c03j4.pdf pdf_icon

MTB20C03J4

Spec. No. C914J4 Issued Date 2013.05.13 CYStech Electronics Corp. Revised Date 2013.12.31 Page No. 1/13 N & P-Channel Enhancement Mode Power MOSFET N-CH P-CH MTB20C03J4 BVDSS 30V -30V ID 8A -7A 18m 28m RDSON(MAX) Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circuit Outline MTB20C03J4 TO-... See More ⇒

 9.1. Size:222K  motorola
mtb20n20e.pdf pdf_icon

MTB20C03J4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

 9.2. Size:258K  motorola
mtb20n20erev2x.pdf pdf_icon

MTB20C03J4

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB20N20E/D Designer's Data Sheet MTB20N20E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 20 AMPERES 200 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.16 OHM than any existing surface m... See More ⇒

 9.3. Size:366K  cystek
mtb20n04j3.pdf pdf_icon

MTB20C03J4

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

Detailed specifications: MTB16P04J3, MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8, IRF1010E, MTB20N03AQ8, MTB20N03Q8, MTB20N06J3, MTB20P03L3, MTB22N04J3, MTB23C04J4, MTB24B03Q8, MTB25A04Q8

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.