MTB20N03AQ8 Specs and Replacement

Type Designator: MTB20N03AQ8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0136 Ohm

Package: SOP-8

MTB20N03AQ8 substitution

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MTB20N03AQ8 datasheet

 ..1. Size:367K  cystek
 mtb20n03aq8.pdf pdf_icon

MTB20N03AQ8

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

 6.1. Size:331K  cystek
 mtb20n03q8.pdf pdf_icon

MTB20N03AQ8

Spec. No. C396Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2014.02.14 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03Q8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 22.3 m (typ) Description The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best c... See More ⇒

 7.1. Size:366K  cystek
 mtb20n04j3.pdf pdf_icon

MTB20N03AQ8

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

 7.2. Size:498K  cystek
 mtb20n06kj3.pdf pdf_icon

MTB20N03AQ8

Spec. No. C103J3 Issued Date 2015.12.31 CYStech Electronics Corp. Revised Date 2018.04.12 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06KJ3 ID@VGS=10V, TC=25 C 38A ID@VGS=10V, TA=25 C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m (typ) Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m (typ) RDS(ON)@VGS=4V, ID=4A 17.2 m (typ) Low On Resistance ... See More ⇒

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Detailed specifications: MTB17A03Q8, MTB17A03V8, MTB17N03Q8, MTB1D7N03ATH8, MTB1D7N03E3, MTB1K6N06KS6R, MTB20A03Q8, MTB20C03J4, IRFB3607, MTB20N03Q8, MTB20N06J3, MTB20P03L3, MTB22N04J3, MTB23C04J4, MTB24B03Q8, MTB25A04Q8, MTB25N04J3

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