MTB60N06L3 Datasheet and Replacement. Cross Reference Search

MTB60N06L3 Datasheet (PDF)

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Spec. No. : C708L3 Issued Date : 2009.05.26 CYStech Electronics Corp.Revised Date : 2013.10.30 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06L3 ID 5.9A41m (typ) RDSON@VGS=10V, ID=5A 46m (typ) RDSON@VGS=4.5V, ID=3A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalent Circui

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB60N06HD/DDesigner's Data SheetMTB60N06HDHDTMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FET60 AMPERESNChannel EnhancementMode Silicon Gate60 VOLTS The D2PAK package has the capability of housing a larger dieRDS(on) = 0.014 OHMthan any existing sur

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6.3. Size:280K cystek
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Spec. No. : C708J3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2013.12.26 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 60VMTB60N06J3 ID 16A35m(typ.) RDSON(MAX)@VGS=10V, ID=10A 40m(typ.) RDSON(MAX)@VGS=5V, ID=8A Features Low Gate Charge Simple Drive Requirement RoHS compliant & Halogen-free package Equivalen

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .