MTBA5Q10Q8 Specs and Replacement

Type Designator: MTBA5Q10Q8

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5(1.7) A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9(10) nS

Cossⓘ - Output Capacitance: 38(56) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.151(0.246) Ohm

Package: SOP-8

MTBA5Q10Q8 substitution

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MTBA5Q10Q8 datasheet

 ..1. Size:361K  cystek
 mtba5q10q8.pdf pdf_icon

MTBA5Q10Q8

Spec. No. C934Q8 Issued Date 2013.10.01 CYStech Electronics Corp. Revised Date 2013.10.03 Page No. 1/12 2N- AND 2P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5Q10Q8 BVDSS 100V -100V ID 2.5A -1.7A RDSON(MAX.) 185m 300m Description The MTBA5Q10Q8 consists of two N-channel and two P-channel enhancement-mode MOSFET in a single SOP-8 package, providi... See More ⇒

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 mtba5c10q8.pdf pdf_icon

MTBA5Q10Q8

Spec. No. C744Q8 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date 2011.10.03 Page No. 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CH MTBA5C10Q8 BVDSS 100V -100V ID 3A -2.5A RDSON(MAX.) 150m 250m Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the d... See More ⇒

 9.2. Size:349K  cystek
 mtba5n10fp.pdf pdf_icon

MTBA5Q10Q8

Spec. No. C731FP Issued Date 2012.12.06 CYStech Electronics Corp. Revised Date Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10FP ID 10A RDS(ON)@VGS=10V, ID=10A 151 m (typ) RDS(ON)@VGS=4.5V, ID=10A 165 m (typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swit... See More ⇒

 9.3. Size:327K  cystek
 mtba5n10v8.pdf pdf_icon

MTBA5Q10Q8

Spec. No. C731V8 Issued Date 2012.08.24 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 100V MTBA5N10V8 ID 7A 133 m VGS=10V, ID=5A RDSON(TYP) 140 m VGS=4.5V, ID=5A Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switch... See More ⇒

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Detailed specifications: MTB90P06Q8, MTBA0N10Q8, MTBA5C10AQ8, MTBA5C10Q8, MTBA5N10FP, MTBA5N10J3, MTBA5N10Q8, MTBA5N10V8, IRFZ44N, MTBA6C12J4, MTBB0P10J3, MTBB0P10L3, MTBB5B10Q8, MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8

Keywords - MTBA5Q10Q8 MOSFET specs

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