All MOSFET. MTC2402Q8 Datasheet

 

MTC2402Q8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTC2402Q8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 8.5(7.9) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 9.5(29) nS
   Cossⓘ - Output Capacitance: 74(159) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.025) Ohm
   Package: SOP-8

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MTC2402Q8 Datasheet (PDF)

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 mtc2402q8.pdf

MTC2402Q8 MTC2402Q8

Spec. No. : C568Q8 Issued Date : 2012.05.02 CYStech Electronics Corp.Revised Date : 2013.11.01 Page No. : 1/13 N- AND P-Channel Logic Level Enhancement Mode MOSFET N-CH P-CHMTC2402Q8 BVDSS 20V -20VID 8.5A -7.9ARDSON(typ.) @VGS=(-)4.5V 20m 25m RDSON(typ.) @VGS=(-)2.5V 28m 35m Description The MTC2402Q8 consists of a N-channel and a P-channel enhancement-mode MOS

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