FSF9150R Datasheet and Replacement
Type Designator: FSF9150R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO254AA
FSF9150R substitution
FSF9150R Datasheet (PDF)
fsf9150.pdf

FSF9150D,FSF9150R22A, -100V, 0.140 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K
Datasheet: FSF150R , FSF250D , FSF250R , FSF254D , FSF254R , FSF450D , FSF450R , FSF9150D , IRF3205 , FSF9250D , FSF9250R , FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R .
History: HUF76619D3 | ZVN2110G | BF998WR
Keywords - FSF9150R MOSFET datasheet
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History: HUF76619D3 | ZVN2110G | BF998WR



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