All MOSFET. FSF9150R Datasheet

 

FSF9150R Datasheet and Replacement


   Type Designator: FSF9150R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO254AA
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FSF9150R Datasheet (PDF)

 7.1. Size:53K  intersil
 fsf9150.pdf pdf_icon

FSF9150R

FSF9150D,FSF9150R22A, -100V, 0.140 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K

Datasheet: FSF150R , FSF250D , FSF250R , FSF254D , FSF254R , FSF450D , FSF450R , FSF9150D , IRF3205 , FSF9250D , FSF9250R , FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R .

History: TK2P60D | IRFBG20

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