FSF9150R MOSFET. Datasheet pdf. Equivalent
Type Designator: FSF9150R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO254AA
FSF9150R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSF9150R Datasheet (PDF)
fsf9150.pdf
FSF9150D,FSF9150R22A, -100V, 0.140 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 22A, -100V, rDS(ON) = 0.140 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K
Datasheet: FSF150R , FSF250D , FSF250R , FSF254D , FSF254R , FSF450D , FSF450R , FSF9150D , IRF3205 , FSF9250D , FSF9250R , FSJ055D , FSJ055R , FSJ160D , FSJ160R , FSJ260D , FSJ260R .
History: SML50W40 | GWM160-0055X1-SMD
History: SML50W40 | GWM160-0055X1-SMD
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918