MTC3586DFA6 Specs and Replacement

Type Designator: MTC3586DFA6

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5(3.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8(17) nS

Cossⓘ - Output Capacitance: 50(45) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027(0.078) Ohm

Package: DFN2X2-6L

MTC3586DFA6 substitution

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MTC3586DFA6 datasheet

 ..1. Size:431K  cystek
 mtc3586dfa6.pdf pdf_icon

MTC3586DFA6

Spec. No. C835DFA6 Issued Date 2013.06.03 CYStech Electronics Corp. Revised Date 2013.10.30 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586DFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586DFA6 consis... See More ⇒

 7.1. Size:467K  cystek
 mtc3586bdfa6.pdf pdf_icon

MTC3586DFA6

Spec. No. C835DFA6 Issued Date 2015.11.02 CYStech Electronics Corp. Revised Date 2018.05.03 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3586BDFA6 BVDSS 20V -20V ID 5A(VGS=4.5V) -3.3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) Description 82m (VGS=1.5V) 280m (VGS=-1.5V) The MTC3586BDFA6 cons... See More ⇒

 8.1. Size:408K  cystek
 mtc3585g6.pdf pdf_icon

MTC3586DFA6

Spec. No. C416G6 Issued Date 2007.07.13 CYStech Electronics Corp. Revised Date 2013.11.13 Page No. 1/13 N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH MTC3585G6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Features Simple drive requirement ... See More ⇒

 8.2. Size:403K  cystek
 mtc3585n6.pdf pdf_icon

MTC3586DFA6

Spec. No. C416G6 Issued Date 2007.07.12 CYStech Electronics Corp. Revised Date 2013.09.06 Page No. 1/12 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH P-CH MTC3585N6 BVDSS 20V -20V ID 4.5A(VGS=4.5V) -3A(VGS=-4.5 V) 27m (VGS=4.5V) 78m (VGS=-4.5V) RDSON(TYP.) 37m (VGS=2.5V) 115m (VGS=-2.5V) 82m (VGS=1.5V) 280m (VGS=-1.5V) Description The MTC3585N6 consist... See More ⇒

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Detailed specifications: MTBB5N10L3, MTBC7N10N3, MTC1016S6R, MTC2402Q8, MTC2590V8, MTC2804Q8, MTC3585G6, MTC3585N6, IRFB4110, MTC380Q8, MTC4501Q8, MTC4503AQ8, MTC4503Q8, MTC4503Q8G, MTC4505Q8, MTC4506J4, MTC4506Q8

Keywords - MTC3586DFA6 MOSFET specs

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