MTDN8810AT8 Datasheet and Replacement. Cross Reference Search

MTDN8810AT8 Datasheet (PDF)

..1. Size:468K cystek
mtdn8810at8.pdf pdf_icon

Spec. No. : C779T8 Issued Date : 2014.04.15 CYStech Electronics Corp.Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810AT8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Features 1.8V drive available Low on-resistance Fast switching speed Pb-free lead pl

6.1. Size:416K cystek
mtdn8810t8.pdf pdf_icon

Spec. No. : C582T8 Issued Date : 2013.07.25 CYStech Electronics Corp.Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET BVDSS 20VMTDN8810T8 ID 5ARDSON@VGS=4.5V, ID=5A 17.5m(typ)RDSON@VGS=2.5V,ID=2.6A 25m(typ) RDSON@VGS=1.8V,ID=1A 41m(typ) Description The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer w

9.1. Size:358K cystek
mtdn8233cdv8.pdf pdf_icon

Spec. No. : C911V8 Issued Date : 2013.12.02 CYStech Electronics Corp.Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233CDV8 ID VGS=4.5V 10A8.1m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 8.4m VGS=3.7V, ID=5.5A RDSON (TYP.) 8.6 m Features VGS=3.1V, ID=5.5A 9.4 m Simple drive requirement VGS=2.5V, ID=5.5A 10

9.2. Size:380K cystek
mtdn8233x6.pdf pdf_icon

Spec. No. : C911X6 Issued Date : 2013.07.12 CYStech Electronics Corp.Revised Date : 2013.11.28 Page No. : 1/9 Dual N -Channel Enhancement Mode MOSFET BVDSS 20VMTDN8233X6 ID VGS=4.5V 11A6.0m VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A 6.0m VGS=3.7V, ID=5.5A RDSON (TYP.) 6.2 m VGS=3.1V, ID=5.5A 6.7 m VGS=2.5V, ID=5.5A 7.8 m Description The MTDN8233X6 consi

Datasheet: MTDN3018S6R , MTDN3154C6 , MTDN4228Q8 , MTDN5820Z6 , MTDN6303S6R , MTDN7002ZHS6R , MTDN8233CDV8 , MTDN8233X6 , IRLB4132 , MTDN8810T8 , MTDN9922Q8 , MTDN9926Q8 , MTDN9946Q8 , MTDN9971Q8 , MTDN9973Q8 , MTDNK2N6 , MTDP2004S6R .