All MOSFET. MTDN9971Q8 Datasheet

 

MTDN9971Q8 Datasheet and Replacement


   Type Designator: MTDN9971Q8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP-8
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MTDN9971Q8 Datasheet (PDF)

 ..1. Size:383K  cystek
 mtdn9971q8.pdf pdf_icon

MTDN9971Q8

Spec. No. : C415Q8 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 7.1. Size:383K  cystek
 mtdn9973q8.pdf pdf_icon

MTDN9971Q8

Spec. No. : C418Q8 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

 8.1. Size:422K  cystek
 mtdn9926q8.pdf pdf_icon

MTDN9971Q8

Spec. No. : C747Q8 Issued Date : 2009.11.09 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20VMTDN9926Q8 ID 6A28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8

 8.2. Size:388K  cystek
 mtdn9922q8.pdf pdf_icon

MTDN9971Q8

Spec. No. : C425Q8 Issued Date : 2007.12.06 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a

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History: TK2P60D | IRFBG20

Keywords - MTDN9971Q8 MOSFET datasheet

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