MTDN9971Q8 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTDN9971Q8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 32.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 156 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP-8
MTDN9971Q8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTDN9971Q8 Datasheet (PDF)
mtdn9971q8.pdf
Spec. No. : C415Q8 Issued Date : 2007.07.05 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
mtdn9973q8.pdf
Spec. No. : C418Q8 Issued Date : 2007.09.20 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
mtdn9926q8.pdf
Spec. No. : C747Q8 Issued Date : 2009.11.09 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 20VMTDN9926Q8 ID 6A28m RDSON(MAX) Description The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8
mtdn9922q8.pdf
Spec. No. : C425Q8 Issued Date : 2007.12.06 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9922Q8 Description The MTDN9922Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for a
mtdn9946q8.pdf
Spec. No. : C598Q8 Issued Date : 2009.11.11 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30VMTDN9946Q8 ID 5A35m RDSON(MAX) Description The MTDN9946Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FDI2532
History: FDI2532
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