All MOSFET. MTE05N10E3 Datasheet

 

MTE05N10E3 Datasheet and Replacement


   Type Designator: MTE05N10E3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 754 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm
   Package: TO-220AB
 

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MTE05N10E3 Datasheet (PDF)

 ..1. Size:277K  cystek
 mte05n10e3.pdf pdf_icon

MTE05N10E3

Spec. No. : C928E3 Issued Date : 2013.11.04 CYStech Electronics Corp.Revised Date : 2013.11.12 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 100VMTE05N10E3 ID 140A5.9m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 6.2m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Charact

 6.1. Size:349K  cystek
 mte05n10fp.pdf pdf_icon

MTE05N10E3

Spec. No. : C928FP Issued Date : 2015.03.16 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFETBVDSS 100VMTE05N10FP ID @ VGS=10V, TC=25C 109A 5.9m RDSON(TYP) @ VGS=10V, ID=20A 6.2m RDSON(TYP) @ VGS=7V, ID=20A Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Ch

 8.1. Size:277K  cystek
 mte05n08e3.pdf pdf_icon

MTE05N10E3

Spec. No. : C918E3 Issued Date : 2013.06.10 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 80VMTE05N08E3 ID 180A4.3m RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 4.5m Features Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic

 9.1. Size:468K  1
 mte050n15brv8.pdf pdf_icon

MTE05N10E3

Spec. No. : C033V8 Issued Date : 2017.10.05 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTE050N15BRV8BVDSS 150VID @ TC=25C, VGS=10V 12.4A ID @ TA=25C, VGS=10V 4.3A 49.1m VGS=10V, ID=3.4A Features RDSON(TYP) 58.5m VGS=6V, ID=3.3A Single Drive Requirement Low On-resistance Fast Switchi

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Datasheet: MTDP2004S6R , MTDP4953BDYQ8 , MTDP4953Q8 , MTDP9620T8 , MTE010N10E3 , MTE010N10FP , MTE040N20P3 , MTE05N08E3 , 7N60 , MTE130N20FP , MTE130N20KE3 , MTE130N20KF3 , MTE130N20KFP , MTE130N20KJ3 , MTE13N08J3 , MTE1K0P15KN3 , MTE1K8N25J3 .

Keywords - MTE05N10E3 MOSFET datasheet

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