All MOSFET. MTE1K8N25KM3 Datasheet

 

MTE1K8N25KM3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTE1K8N25KM3
   Marking Code: E1K8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.5 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.33 Ohm
   Package: SOT-89

 MTE1K8N25KM3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTE1K8N25KM3 Datasheet (PDF)

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 mte1k8n25km3.pdf

MTE1K8N25KM3 MTE1K8N25KM3

Spec. No. : C929M3 Issued Date : 2013.08.11 CYStech Electronics Corp.Revised Date : 2014.04.09 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25KM3 ID 1ARDS(ON)@VGS=10V, ID=0.5A 1.33(typ) RDS(ON)@VGS=10V, ID=1A 1.4(typ) Features RDS(ON)@VGS=10V, ID=2A 1.63(typ) Low Gate Charge RDS(ON)@VGS=6V, ID=0.5A 1.35(typ) Simple Driv

 4.1. Size:306K  cystek
 mte1k8n25kj3.pdf

MTE1K8N25KM3 MTE1K8N25KM3

Spec. No. : C929J3 Issued Date : 2013.07.26 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25KJ3 ID 2.5ARDS(ON)@VGS=10V, ID=2A 1.63(typ) RDS(ON)@VGS=6V, ID=1A 1.41(typ) Features Low gate charge Simple drive requirement Pb-free lead plating and halogen-free package ESD

 5.1. Size:306K  cystek
 mte1k8n25j3.pdf

MTE1K8N25KM3 MTE1K8N25KM3

Spec. No. : C890J3 Issued Date : 2012.12.14 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 250VMTE1K8N25J3 ID 2.5ARDS(ON)@VGS=10V, ID=1A 1.71(typ) RDS(ON)@VGS=6V, ID=1A 1.72(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalen

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 mte1k0p15kn3.pdf

MTE1K8N25KM3 MTE1K8N25KM3

Spec. No. : C941N3 Issued Date : 2013.11.22 CYStech Electronics Corp.Revised Date : Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -150VID -0.69AVGS=-10V, ID=-0.5A 1.01 MTE1K0P15KN3 RDSON(TYP) VGS=-6V, ID=-0.5A 1.11 Features ESD protected 2.5KVAdvanced trench process technology High density cell design for ultra low on resistancePb-free

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AOB292L

 

 
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