MTE65N20J3 Specs and Replacement

Type Designator: MTE65N20J3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm

Package: TO-252

MTE65N20J3 substitution

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MTE65N20J3 datasheet

 ..1. Size:304K  cystek
 mte65n20j3.pdf pdf_icon

MTE65N20J3

Spec. No. C872J3 Issued Date 2012.10.25 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20J3 ID 25A 61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou... See More ⇒

 6.1. Size:587K  1
 mte65n20h8.pdf pdf_icon

MTE65N20J3

Spec. No. C872H8 Issued Date 2016.02.01 CYStech Electronics Corp. Revised Date 2016.07.12 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20H8 ID @VGS=10V, TC=25 C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre... See More ⇒

 6.2. Size:282K  cystek
 mte65n20f3.pdf pdf_icon

MTE65N20J3

Spec. No. C872F3 Issued Date 2012.12.26 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20F3 ID 33A 61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263 ... See More ⇒

 6.3. Size:587K  cystek
 mte65n20h8.pdf pdf_icon

MTE65N20J3

Spec. No. C872H8 Issued Date 2016.02.01 CYStech Electronics Corp. Revised Date 2016.07.12 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTE65N20H8 ID @VGS=10V, TC=25 C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre... See More ⇒

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Detailed specifications: MTE20N10FP, MTE50N10FP, MTE50N15FP, MTE50N15J3, MTE50N15Q8, MTE65N15FP, MTE65N15J3, MTE65N20F3, IRLB3034, MTEA0N10J3, MTEA0N10Q8, MTEA2N15L3, MTEA2N15Q8, MTEA6C15J4, MTEA6C15Q8, MTEB4N15J3, MTEB6N20J3

Keywords - MTE65N20J3 MOSFET specs

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