All MOSFET. MTE65N20J3 Datasheet

 

MTE65N20J3 Datasheet and Replacement


   Type Designator: MTE65N20J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TO-252
 

 MTE65N20J3 substitution

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MTE65N20J3 Datasheet (PDF)

 ..1. Size:304K  cystek
 mte65n20j3.pdf pdf_icon

MTE65N20J3

Spec. No. : C872J3 Issued Date : 2012.10.25 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20J3 ID 25A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent Circuit Ou

 6.1. Size:587K  1
 mte65n20h8.pdf pdf_icon

MTE65N20J3

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

 6.2. Size:282K  cystek
 mte65n20f3.pdf pdf_icon

MTE65N20J3

Spec. No. : C872F3 Issued Date : 2012.12.26 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20F3 ID 33A61m VGS=10V, ID=11A RDSON(TYP) 66m VGS=6V, ID=5A Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit Outline MTE65N20F3 TO-263

 6.3. Size:587K  cystek
 mte65n20h8.pdf pdf_icon

MTE65N20J3

Spec. No. : C872H8 Issued Date : 2016.02.01 CYStech Electronics Corp. Revised Date : 2016.07.12 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 200VMTE65N20H8ID @VGS=10V, TC=25C 24A RDSON(TYP) VGS=10V, ID=11A 61m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Repetitive Avalanche Rated Pb-fre

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Datasheet: MTE20N10FP , MTE50N10FP , MTE50N15FP , MTE50N15J3 , MTE50N15Q8 , MTE65N15FP , MTE65N15J3 , MTE65N20F3 , 60N06 , MTEA0N10J3 , MTEA0N10Q8 , MTEA2N15L3 , MTEA2N15Q8 , MTEA6C15J4 , MTEA6C15Q8 , MTEB4N15J3 , MTEB6N20J3 .

History: TPC8111 | IRLR2908TR | HGP080N10S | L2N7002KN3T5G | STFI31N65M5 | FK4B0111 | STP11NM80

Keywords - MTE65N20J3 MOSFET datasheet

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