2N6967 MOSFET Datasheet: N-Ch, 200V, 13A. Full specification with pinout and replacement list

2N6967 Specs and Replacement

   Type Designator: 2N6967
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   Cossⓘ - Output Capacitance: 1.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO213

2N6967 substitution

- MOSFET ⓘ Cross-Reference Search

2N6967 datasheet

9.1. Size:298K rca
2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf pdf_icon

... See More ⇒

9.2. Size:1095K ixys
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf pdf_icon

Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 2003 Powered by ICminer.com Electronic-Library Service CopyRight 20... See More ⇒

9.3. Size:61K microsemi
2n696 2n697.pdf pdf_icon

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Juncti... See More ⇒

9.4. Size:270K siliconix
2n6962.pdf pdf_icon