MTN2002ZW3 Datasheet and Replacement

Spec. No. : C447W3 Issued Date : 2010.07.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTN2002ZW3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZW3 SOT-923 D SG GGa

Spec. No. : C447S3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTN2002ZS3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTN2002ZS3 SOT-323 D S

Spec. No. : C431J3 CYStech Electronics Corp. Issued Date : 2008.12.11 Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 60VMTN20NF06J3 ID 60ARDSON 10.6m(typ) Features Low Gate Charge Repetitive Avalanche Rated Simple Drive Requirement Fast Switching Characteristic RoHS compliant package Symbol Outline MTN

Spec. No. : C801F3 Issued Date : 2010.05.18 CYStech Electronics Corp.Revised Date : Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 200V RDS(ON) : 90m (typ.) MTN20N20F3 ID : 20A Description The MTN20N20F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc