MTN2302V3 Specs and Replacement

Type Designator: MTN2302V3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 4.4 nC

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TSOT-23

MTN2302V3 substitution

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MTN2302V3 datasheet

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 mtn2302v3.pdf pdf_icon

MTN2302V3

Spec. No. C323V3 Issued Date 2009.01.19 CYStech Electronics Corp. Revised Date 2010.06.18 Page No. 1/9 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Features V =20V DS R =85m (max.)@V =4.5V, I =3.6A DS(ON) GS DS R =115m (max.)@V =2.5V, I =3.1A DS(ON) GS DS Simple drive requirement Small package outline Capable of 2.5V gate drive ... See More ⇒

 7.1. Size:275K  cystek
 mtn2302n3.pdf pdf_icon

MTN2302V3

Spec. No. C323N3 Issued Date 2004.04.05 CYStech Electronics Corp. Revised Date 2012.06.26 Page No. 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20V MTN2302N3 ID 3.6A 29m (typ.) RDSON(MAX)@VGS=4.5V, ID=3.6A 39m (typ.) RDSON(MAX)@VGS=2.5V, ID=3.1A Features Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free le... See More ⇒

 8.1. Size:307K  cystek
 mtn2304n3.pdf pdf_icon

MTN2302V3

Spec. No. C737N3 Issued Date 2011.11.24 CYStech Electronics Corp. Revised Date 2012.02.10 Page No. 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2304N3 ID 5A 20m VGS=10V, ID=5A RDSON(TYP) 28m VGS=4.5V, ID=4A Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MTN... See More ⇒

 8.2. Size:310K  cystek
 mtn2306an3.pdf pdf_icon

MTN2302V3

Spec. No. C429N3 Issued Date 2008.08.14 CYStech Electronics Corp. Revised Date 2012.03.29 Page No. 1/ 8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30V MTN2306AN3 ID 5.5A 25m VGS=10V, ID=5A 27m RDSON(TYP) VGS=4.5V, ID=5A 30m VGS=2.5V, ID=2.6A Features Low on-resistance Low gate charge Excellent thermal and electrical capabilities ... See More ⇒

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Detailed specifications: MTN1N65I3, MTN2002ZS3, MTN2002ZW3, MTN20N20F3, MTN20NF06J3, MTN22N20J3, MTN2300N3, MTN2302N3, 12N60, MTN2304M3, MTN2304N3, MTN2306AM3, MTN2306AN3, MTN2306N3, MTN2306ZN3, MTN2310M3, MTN2310N3

Keywords - MTN2302V3 MOSFET specs

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