All MOSFET. MTN3055J3 Datasheet

 

MTN3055J3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTN3055J3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.6 nC
   trⓘ - Rise Time: 22.5 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO-252

 MTN3055J3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTN3055J3 Datasheet (PDF)

 ..1. Size:563K  cystek
 mtn3055j3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C390J3 Issued Date : 2007.06.12 CYStech Electronics Corp.Revised Date : 2009.02.04 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VID 15AMTN3055J3 RDSON 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic RoHS compliant package Symbol Outline TO-252 MTN3055J3GGate G D S D

 7.1. Size:349K  cystek
 mtn3055m3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C390M3 Issued Date : 2007.09.19 CYStech Electronics Corp.Revised Date : 2009.12.03 Page No. : 1/6 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VID 6AMTN3055M3 RDSON(MAX) 26m Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free package Symbol Outline MTN3055M3 SOT-89 D G D S GGate S

 7.2. Size:290K  cystek
 mtn3055l3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C390L3 Issued Date : 2010.10.05 CYStech Electronics Corp. Revised Date : 2012.08.20 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET BVDSS 30VMTN3055L3 ID 8.3A19m (typ) RDSON@VGS=10V, ID=4A 25m (typ) RDSON@VGS=4.5V, ID=3A Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating p

 9.1. Size:307K  cystek
 mtn303kn3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C814N3 Issued Date : 2012.05.15 CYStech Electronics Corp.Revised Date : 2012.08.27 Page No. : 1/8 20V N-CHANNEL Enhancement Mode MOSFET BVDSS 20VMTN303KN3 ID 850mARDSON@VGS=4.5V, ID=600mA 300m(typ) RDSON@VGS=2.5V,ID=400mA 450m(typ) RDSON@VGS=1.8V,ID=350mA 870m(typ) Features Simple drive requirement Small package outline Pb-free packag

 9.2. Size:261K  cystek
 mtn3018s3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C320S3-R Issued Date : 2007.11.29 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/7 N-CHANNEL MOSFET MTN3018S3 Description The MTN3018S3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel

 9.3. Size:390K  cystek
 mtn3023j3.pdf

MTN3055J3 MTN3055J3

Spec. No. : C737J3 Issued Date : 2011.11.22 CYStech Electronics Corp.Revised Date : 2014.03.14 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 30VMTN3023J3 ID 30AVGS=10V, ID=20A 14m RDSON(TYP) Features VGS=4.5V, ID=10A 21m Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package Equivalent C

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: NTD20N06-1G | IRL3302 | RCX220N25 | TK10P60W | CS140N10A | PZ5G7EA | KI1905DL

 

 
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