MTN3207F3 Specs and Replacement

Type Designator: MTN3207F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 517 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: TO-263

MTN3207F3 substitution

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MTN3207F3 datasheet

 ..1. Size:336K  cystek
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MTN3207F3

Spec. No. C578F3 Issued Date 2011.10.17 CYStech Electronics Corp. Revised Date 2013.12.16 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 8.6 m (typ.) MTN3207F3 ID 80A Description The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

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MTN3207F3

Spec. No. C578E3 Issued Date 2011.10.17 CYStech Electronics Corp. Revised Date 2011.10.20 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 75V RDS(ON) 8.6 m (typ.) MTN3207E3 ID 80A Description The MTN3207E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

 8.1. Size:271K  cystek
mtn3205e3.pdf pdf_icon

MTN3207F3

Spec. No. C572E3 Issued Date 2013.05.06 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 55V MTN3205E3 ID 128A 3.9 m RDSON(TYP) @ VGS=10V, ID=62A RDSON(TYP) @ VGS=6V, ID=30A 4.5 m Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchin... See More ⇒

Detailed specifications: MTN3018S3, MTN3023J3, MTN303KN3, MTN3055J3, MTN3055L3, MTN3055M3, MTN3205E3, MTN3207E3, IRLB3034, MTN3400N3, MTN3410F3, MTN3410J3, MTN3418BN3, MTN3418CN3, MTN3418N3, MTN3418S3, MTN3434G6

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