MTN3207F3 Datasheet and Replacement
Type Designator: MTN3207F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 517 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO-263
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MTN3207F3 Datasheet (PDF)
mtn3207f3.pdf

Spec. No. : C578F3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2013.12.16 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207F3 ID : 80A Description The MTN3207F3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn3207e3.pdf

Spec. No. : C578E3 Issued Date : 2011.10.17 CYStech Electronics Corp.Revised Date : 2011.10.20 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFETBVDSS : 75V RDS(ON) : 8.6 m(typ.)MTN3207E3 ID : 80A Description The MTN3207E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
mtn3205e3.pdf

Spec. No. : C572E3 Issued Date : 2013.05.06 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFETBVDSS 55VMTN3205E3 ID 128A3.9 m RDSON(TYP) @ VGS=10V, ID=62A RDSON(TYP) @ VGS=6V, ID=30A 4.5 m Description The MTN3205E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switchin
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: RTF020P02TL | DMP2104LP | IRFBG20 | DMN2300UFB4 | TK2P60D | DMN60H3D5SK3
Keywords - MTN3207F3 MOSFET datasheet
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History: RTF020P02TL | DMP2104LP | IRFBG20 | DMN2300UFB4 | TK2P60D | DMN60H3D5SK3



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