MTN40N03I3 Specs and Replacement

Type Designator: MTN40N03I3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO-251

MTN40N03I3 substitution

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MTN40N03I3 datasheet

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 mtn40n03i3.pdf pdf_icon

MTN40N03I3

Spec. No. C745I3 Issued Date 2009.10.16 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V RDS(ON) 21m MTN40N03I3 ID 36A Description The MTN40N03I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos... See More ⇒

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MTN40N03I3

Spec. No. C381J3 Issued Date 2007.06.12 CYStech Electronics Corp. Revised Date 2009.02.04 Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V ID 36A MTN40N03J3 RDSON 21m Features Dynamic dv/dt Rating Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol Outline TO-25... See More ⇒

Detailed specifications: MTN3607F3, MTN3820F3, MTN3820J3, MTN3K01N3, MTN3N60FP, MTN3N60I3, MTN3N60J3, MTN3N65FP, IRFZ44, MTN40N03J3, MTN4402Q8, MTN4410Q8, MTN4410V8, MTN4424Q8, MTN4800V8, MTN4N01Q8, MTN4N60AE3

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