MTN4410V8 MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN4410V8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 124 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN3X3
MTN4410V8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN4410V8 Datasheet (PDF)
mtn4410v8.pdf
Spec. No. : C397V8 Issued Date : 2012.03.14 CYStech Electronics Corp.Revised Date : 2012.03.15 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN4410V8 Features Single Drive Requirement Low On-resistance Pb-free lead plating package Applications Synchronous rectifier for DC/DC converters Telecom secondary side rectification High end s
mtn4410q8.pdf
Spec. No. : C397Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2014.01.23 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTN4410Q8 Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic dv/dt rating Repetitive Avalanche Rated Pb-free lead plating and halogen-free package Symbol O
mtn4402q8.pdf
Spec. No. : C910Q8 Issued Date : 2013.05.21 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET BVDSS 20VMTN4402Q8 ID 20A4.3m VGS=4.5V, ID=20A RDSON(TYP) 5.3m VGS=2.5V, ID=20A Description The MTN4402Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switc
mtn4424q8.pdf
Spec. No. : C382Q8 Issued Date : 2007.06.14 CYStech Electronics Corp.Revised Date : 2011.03.18 Page No. : 1/7 N-Channel Enhancement Mode Power MOSFET MTN4424Q8 Description The MTN4424Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack
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