MTN4N60AFP Specs and Replacement

Type Designator: MTN4N60AFP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 52 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220FP

MTN4N60AFP substitution

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MTN4N60AFP datasheet

 ..1. Size:315K  cystek
mtn4n60afp.pdf pdf_icon

MTN4N60AFP

Spec. No. C408FP-B Issued Date 2010.03.15 CYStech Electronics Corp. Revised Date 2011.03.29 Page No. 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) typ 2.8 MTN4N60AFP ID 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r... See More ⇒

 6.1. Size:239K  cystek
mtn4n60ae3.pdf pdf_icon

MTN4N60AFP

Spec. No. C408E3-A Issued Date 2011.01.19 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.8 (typ.) MTN4N60AE3 ID 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 7.1. Size:286K  cystek
mtn4n60fp.pdf pdf_icon

MTN4N60AFP

Spec. No. C408FP Issued Date 2008.09.02 CYStech Electronics Corp. Revised Date 2012.11.20 Page No. 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60FP ID 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re... See More ⇒

 7.2. Size:320K  cystek
mtn4n60e3.pdf pdf_icon

MTN4N60AFP

Spec. No. C408E3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 2.1 (typ.) MTN4N60E3 ID 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and... See More ⇒

Detailed specifications: MTN40N03J3, MTN4402Q8, MTN4410Q8, MTN4410V8, MTN4424Q8, MTN4800V8, MTN4N01Q8, MTN4N60AE3, IRF3710, MTN4N60E3, MTN4N60FP, MTN4N60I3, MTN4N60J3, MTN4N65FP, MTN4N65I3, MTN4N65J3, MTN4N70I3

Keywords - MTN4N60AFP MOSFET specs

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