MTN4N60AFP MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN4N60AFP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 40 nS
Drain-Source Capacitance (Cd): 52 pF
Maximum Drain-Source On-State Resistance (Rds): 2.8 Ohm
Package: TO-220FP
MTN4N60AFP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN4N60AFP PDF doc:
1.1. mtn4n60afp.pdf 
Size:315K _cystek
Spec. No. : C408FP-B Issued Date : 2010.03.15 CYStech Electronics Corp. Revised Date : 2011.03.29 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) typ: 2.8Ω MTN4N60AFP ID : 4A Description The MTN4N60AFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
2.1. mtn4n60ae3.pdf Size:239K _cystek
Spec. No. : C408E3-A Issued Date : 2011.01.19 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60AE3 ID : 4A Description The MTN4N60AE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance
3.1. mtn4n60i3.pdf Size:339K _cystek
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp. Revised Date : 2013.10.18 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60I3 ID : 4A Description The MTN4N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
3.2. mtn4n60fp.pdf Size:286K _cystek
Spec. No. : C408FP Issued Date : 2008.09.02 CYStech Electronics Corp. Revised Date :2012.11.20 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN4N60FP ID : 4A Description The MTN4N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
3.3. mtn4n60j3.pdf Size:357K _cystek
Spec. No. : C408I3 Issued Date : 2010.01.04 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.8Ω(typ.) MTN4N60J3 ID : 4A Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating package Applications
3.4. mtn4n60e3.pdf Size:320K _cystek
Spec. No. : C408E3 Issued Date : 2010.12.06 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 600V RDS(ON) : 2.1Ω(typ.) MTN4N60E3 ID : 4A Description The MTN4N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and
Datasheet: MTN40N03J3 , MTN4402Q8 , MTN4410Q8 , MTN4410V8 , MTN4424Q8 , MTN4800V8 , MTN4N01Q8 , MTN4N60AE3 , BUZ11 , MTN4N60E3 , MTN4N60FP , MTN4N60I3 , MTN4N60J3 , MTN4N65FP , MTN4N65I3 , MTN4N65J3 , MTN4N70I3 .
