MTN7002ZAS3 Specs and Replacement
Type Designator: MTN7002ZAS3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SOT-323
MTN7002ZAS3 substitution
- MOSFET ⓘ Cross-Reference Search
MTN7002ZAS3 datasheet
mtn7002zas3.pdf
Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/7 N-CHANNEL MOSFET MTN7002ZAS3 Description The MTN7002ZAS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance High ESD High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel ... See More ⇒
mtn7002zhs3.pdf
Spec. No. C320S3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2014.01.28 Page No. 1/7 N-Channel Enhancement Mode MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features Low on-resistance Low-voltage drive(4V) High ESD Easily designed drive circuits High speed switching Easy to use in... See More ⇒
mtn7002zhn3.pdf
Spec. No. C320N3 Issued Date 2007.11.06 CYStech Electronics Corp. Revised Date 2013.12.17 Page No. 1/7 N-Channel Logic Level Enhancement Mode MOSFET MTN7002ZHN3 Features Low on-resistance High ESD High speed switching Low-voltage drive Easily designed drive circuits Easy to use in parallel Pb-free lead plating and halogen-free packa... See More ⇒
Detailed specifications: MTN6680Q8, MTN6N65FP, MTN6N70FP, MTN7000A3, MTN7000ZA3, MTN7000ZHA3, MTN7002N3, MTN7002S3, CS150N03A8, MTN7002ZHN3, MTN7002ZHS3, MTN7002ZN3, MTN7002ZS3, MTN7451J3, MTN7451Q8, MTN7478Q8, MTN7N60E3
Keywords - MTN7002ZAS3 MOSFET specs
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