MTN8N65EA MOSFET. Datasheet pdf. Equivalent
Type Designator: MTN8N65EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 80 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 70 nS
Drain-Source Capacitance (Cd): 180 pF
Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm
Package: SOT-82
MTN8N65EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTN8N65EA Datasheet (PDF)
1.1. mtn8n65ea.pdf 
Size:250K _cystek
Spec. No. : C727EA Issued Date : 2010.12.22 CYStech Electronics Corp. Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) :1.1Ω(typ.) MTN8N65EA ID : 7.5A Description The MTN8N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
2.1. mtn8n65e3.pdf Size:237K _cystek
Spec. No. : C727E3 Issued Date : 2010.08.09 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 1.2Ω(typ.) MTN8N65E3 ID : 7.5A Description The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a
3.1. mtn8n65fp.pdf Size:364K _cystek
Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp. Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) :1.2Ω(typ.) MTN8N65FP ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
