All MOSFET. MTNK3Y3 Datasheet

 

MTNK3Y3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MTNK3Y3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.255 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 7.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: SOT-723

 MTNK3Y3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTNK3Y3 Datasheet (PDF)

 ..1. Size:296K  cystek
 mtnk3y3.pdf

MTNK3Y3 MTNK3Y3

Spec. No. : C447Y3 Issued Date : 2011.02.24 CYStech Electronics Corp.Revised Date : 2012.10.05 Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20VMTNK3Y3 ID 255mARDSON@VGS=4.5V, ID=255mA 1.7(typ.)RDSON@VGS=2.5V, ID=20mA 2.2(typ.)RDSON@VGS=1.8V, ID=20mA 3.5(typ.)Description Low voltage drive, 1.8V. RDSON@VGS=1.6V, ID=20mA 4.1(typ.) Easy to use in

 9.1. Size:262K  cystek
 mtnk3s3.pdf

MTNK3Y3 MTNK3Y3

Spec. No. : C447S3 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2010.06.18 Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3S3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTNK3S3 SOT-323 D SG G

 9.2. Size:263K  cystek
 mtnk3w3.pdf

MTNK3Y3 MTNK3Y3

Spec. No. : C447W3 Issued Date : 2010.07.26 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3W3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free package Symbol Outline MTNK3W3 SOT-923 D SG GGate S

 9.3. Size:268K  cystek
 mtnk3c3.pdf

MTNK3Y3 MTNK3Y3

Spec. No. : C447C3 Issued Date : 2011.09.19 CYStech Electronics Corp.Revised Date : Page No. : 1/6 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3C3 RDSON 3 Description Low voltage drive, 1.8V. Easy to use in parallel. High speed switching. ESD protected device. Pb-free package. Symbol Outline MTNK3C3 SOT-523 D S G G

 9.4. Size:270K  cystek
 mtnk3n3.pdf

MTNK3Y3 MTNK3Y3

Spec. No. : C447N3 Issued Date : 2010.08.18 CYStech Electronics Corp.Revised Date : 2013.10.23 Page No. : 1/7 ESD protected N-CHANNEL MOSFET BVDSS 20V ID 100mAMTNK3N3 RDSON 3 Description Low voltage drive, 1.8V Easy to use in parallel High speed switching ESD protected device Pb-free lead plating and halogen-free package Symbol Outline

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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