All MOSFET. 2N6967JANTXV Datasheet

 

2N6967JANTXV Datasheet and Replacement


   Type Designator: 2N6967JANTXV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 1.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO213
 

 2N6967JANTXV substitution

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2N6967JANTXV Datasheet (PDF)

 9.2. Size:1095K  ixys
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2N6967JANTXV

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 9.3. Size:61K  microsemi
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2N6967JANTXV

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti

 9.4. Size:270K  siliconix
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2N6967JANTXV

Datasheet: 2N6963 , 2N6964 , 2N6965 , 2N6966 , 2N6966JANTX , 2N6966JANTXV , 2N6967 , 2N6967JANTX , 20N60 , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , 2N7000 , 2N7000P .

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