MTP2301N3 Datasheet and Replacement

Spec. No. : C322N3 CYStech Electronics Corp. Issued Date : 2004.04.05 Revised Date :2018.08.31 Page No. : 1/9 20V P-Channel Enhancement Mode MOSFET BVDSS -20V MTP2301N3 ID@TA=25C, VGS=-4.5V -3.4A 79m RDSON(TYP)@VGS=-4.5V, ID=-2.8A 116m RDSON(TYP)@VGS=-2.5V, ID=-2A Features Advanced trench process technology High density cell design for ultra low on res

MTP2301N3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Spec. No. : C322S3 CYStech Electronics Corp. Issued Date : 2013.08.29 Revised Date : 2013.09.09 Page No. : 1/8 20V P-Channel Enhancement Mode MOSFET BVDSS -20VMTP2301S3 ID -1.6A75m(typ.) RDSON(MAX)@VGS=-4.5V, ID=-1.6A 113m(typ.)RDSON(MAX)@VGS=-2.5V, ID=-1A Features Advanced trench process technology High density cell design for ultra low on resistance

Spec. No. : C417N3 Issued Date : 2007.07.27 CYStech Electronics Corp. Revised Date : 2018.12.06 Page No. : 1/ 9 P-Channel Enhancement Mode MOSFET BVDSS -20V ID@TA=25C, VGS=-4.5V -4.8A MTP2305N3 27m (typ.) RDSON@VGS=-10V, ID=-4.5A 32m (typ.) RDSON@VGS=-4.5V, ID=-4.2A 37m (typ.) RDSON@VGS=-2.5V, ID=-2A 47m (typ.) RDSON@VGS=-1.8V, ID=-1A Features

Spec. No. : C426N3 Issued Date : 2008.03.24 CYStech Electronics Corp.Revised Date : Page No. : 1/8 P-CHANNEL Enhancement Mode MOSFET MTP2303N3 Description The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. Features V =-30V DS