MTP2311M3 Specs and Replacement

Type Designator: MTP2311M3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm

Package: SOT-89

MTP2311M3 substitution

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MTP2311M3 datasheet

 ..1. Size:290K  cystek
 mtp2311m3.pdf pdf_icon

MTP2311M3

Spec. No. C733M3 Issued Date 2013.09.18 CYStech Electronics Corp. Revised Date Page No. 1/9 60V P-Channel Enhancement Mode MOSFET BVDSS -60V ID -4A MTP2311M3 RDSON@VGS=-10V, ID=-4A 72m (typ.) RDSON@VGS=-4.5V, ID=-3A 98m (typ.) Features Single Drive Requirement Ultra High Speed Switching Pb-free lead plating and halogen-free package Symbol Outlin... See More ⇒

 7.1. Size:324K  cystek
 mtp2311v8.pdf pdf_icon

MTP2311M3

Spec. No. C733V8 Issued Date 2013.06.24 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -60V MTP2311V8 ID -11A RDSON@VGS=10V, ID=-3A 63m (typ) RDSON@VGS=-4.5V, ID=-2A 78m (typ) Description The MTP2311V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized... See More ⇒

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MTP2311M3

Spec. No. C733N3 Issued Date 2011.12.27 CYStech Electronics Corp. Revised Date Page No. 1/8 -60V P-CHANNEL Enhancement Mode MOSFET BVDSS -60V MTP2311N3 ID -3.5A RDSON@VGS=-10V, ID=-2A 72m (typ) RDSON@VGS=-4.5V,ID=-1.7A 98m (typ) Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technology High density cell... See More ⇒

 8.1. Size:316K  cystek
 mtp2317n3.pdf pdf_icon

MTP2311M3

Spec. No. C566N3 CYStech Electronics Corp. Issued Date 2012.04.12 Revised Date 2014.01.14 Page No. 1/9 20V P-CHANNEL Enhancement Mode MOSFET BVDSS -20V MTP2317N3 ID -5.8A 28m (typ.) RDSON@VGS=-4.5V, ID=-4.5A 35m (typ.) RDSON@VGS=-2.5V, ID=-2.5A 51m (typ.) RDSON@VGS=-1.8V, ID=-2A Features Advanced trench process technology High density cell design f... See More ⇒

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Detailed specifications: MTP1406M3, MTP162M3, MTP2010J3, MTP2071M3, MTP2301N3, MTP2301S3, MTP2303N3, MTP2305N3, 20N60, MTP2311N3, MTP2311V8, MTP2317N3, MTP2402Q8, MTP2603G6, MTP2603N6, MTP2603Q6, MTP2611V8

Keywords - MTP2311M3 MOSFET specs

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