FSL430R Datasheet and Replacement

FSL430D, FSL430R2A, 500V, 2.50 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil has developed aseries of Radiation Hardened MOSFETs specifically Total Dosedesigned for commercial and military space applications.- Meets Pre-RAD Specifications to 100K RAD (Si)Enhance

PD - 97115DIRFB4310ZPbFIRFS4310ZPbFIRFSL4310ZPbFHEXFET Power MOSFETApplicationsDVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.4.8m:l Uninterruptible Power Supplyl High Speed Power Switching max. 6.0m:l Hard Switched and High Frequency CircuitsGID (Silicon Limited)127A cID (Package Limited)120A SBenefitsl Improved Gate,

PD - 14275DIRFB4310PbFIRFS4310PbFIRFSL4310PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power Switchingl Hard Switched and High Frequency Circuits RDS(on) typ. 5.6mG max. 7.0mID 130ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

PD - 97105CIRFS4321PbFIRFSL4321PbFApplicationsHEXFET Power MOSFETl Motion Control ApplicationsVDSS 150Vl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply RDS(on) typ.12m:l Hard Switched and High Frequency Circuitsmax. 15m:Benefits85A cIDl Low RDSON Reduces Lossesl Low Gate Charge Improves the SwitchingD PerformanceDD

AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features VDSS 100V Advanced Process Technology RDS(on) typ. 5.6m Ultra Low On-Resistance max. 7.0m 175C Operating Temperature Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-Free, RoHS Compliant Au

Isc N-Channel MOSFET Transistor IRFSL4321FEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 15

isc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFSL4310FEATURESStatic drain-source on-resistance:RDS(on) 7.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T