All MOSFET. FSL9130D Datasheet

 

FSL9130D Datasheet and Replacement


   Type Designator: FSL9130D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.68 Ohm
   Package: TO205AF
 

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FSL9130D Datasheet (PDF)

 7.1. Size:53K  intersil
fsl9130.pdf pdf_icon

FSL9130D

FSL9130D,FSL9130R5A, -100V, 0.680 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 5A, -100V, rDS(ON) = 0.680 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

 8.1. Size:47K  harris semi
fsl913ao.pdf pdf_icon

FSL9130D

FSL913AOD,S E M I C O N D U C T O RFSL913AORRadiation Hardened,September 1997 SEGR Resistant P-Channel Power MOSFETsFeatures Description 7A, -100V, rDS(ON) = 0.300 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MO

 9.1. Size:68K  intersil
fsl9110.pdf pdf_icon

FSL9130D

FSL9110D, FSL9110RData Sheet October 1998 File Number 4225.32.5A, -100V, 1.30 Ohm, Rad Hard, SEGR FeaturesResistant, P-Channel Power MOSFETs 2.5A, -100V, rDS(ON) = 1.30The Discrete Products Operation of Intersil has developed a Total Doseseries of Radiation Hardened MOSFETs specifically- Meets Pre-RAD Specifications to 100K RAD (Si)designed for commercial and military

Datasheet: FSL23A4D , FSL23A4R , FSL23AOD , FSL23AOR , FSL430D , FSL430R , FSL9110D , FSL9110R , AO4407 , FSL9130R , FSL913AOD , FSL913AOR , FSL9230D , FSL9230R , FSL923AOD , FSL923AOR , FSS130D .

Keywords - FSL9130D MOSFET datasheet

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