MTP9435BDYAQ8 Specs and Replacement

Type Designator: MTP9435BDYAQ8

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOP-8

MTP9435BDYAQ8 substitution

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MTP9435BDYAQ8 datasheet

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 mtp9435bdyaq8.pdf pdf_icon

MTP9435BDYAQ8

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP9435BDYAQ8 BVDSS -30V ID -8.4A 23m (typ.) RDSON(MAX)@VGS=-10V, ID=-7A 38m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYAQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

 4.1. Size:295K  cystek
 mtp9435bdyq8.pdf pdf_icon

MTP9435BDYAQ8

Spec. No. C386Q8 Issued Date 2007.06.08 CYStech Electronics Corp. Revised Date 2012.03.26 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP9435BDYQ8 ID -8.4A 22m (typ.) RDSON(MAX)@VGS=-10V, ID=-7A 35m (typ.) RDSON(MAX)@VGS=-4.5V, ID=-5A Description The MTP9435BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

 7.1. Size:358K  cystek
 mtp9435l3.pdf pdf_icon

MTP9435BDYAQ8

Spec. No. C400L3 Issued Date 2009.06.22 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435L3 RDSON(MAX) 60m ID -6A Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP9435L3 D S G Gate ... See More ⇒

 7.2. Size:343K  cystek
 mtp9435q8.pdf pdf_icon

MTP9435BDYAQ8

Spec. No. C426Q8 Issued Date 2006.03.31 CYStech Electronics Corp. Revised Date 2013.03.01 Page No. 1/8 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP9435Q8 ID -5.6A RDSON@VGS=-10V, ID=-5.3A 50m (typ) RDSON@VGS=-4.5V, ID=-4.2A 75m (typ) Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plat... See More ⇒

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Detailed specifications: MTP5103J3, MTP5103N3, MTP5210F3, MTP5614N6, MTP6405N6, MTP658G6, MTP7425Q8, MTP9006E3, IRFP450, MTP9435BDYQ8, MTP9435L3, MTP9435Q8, MTP9575J3, MTP9575L3, MTP9575Q8, MTP9620Q8, MTP9620V8

Keywords - MTP9435BDYAQ8 MOSFET specs

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