AO3403 Datasheet and Replacement

AO340330V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO3403 uses advanced trench technology to provide -30Vexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3403AO3403P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3403 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO3403 (KO3403)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-2.6 A (VGS =-10V)1 2 RDS(ON) 115m (VGS =-10V)+0.050.95+0.1-0.1 0.1 -0.01 RDS(ON) 150m (VGS =-4.5V)1.9+0.1-0.1 RDS(ON) 200m (VGS =-2.5V)1. GateDD2. Source3. DrainGGSS Absolute Max

SMD Type MOSFETP-Channel MOSFETAO3403 (KO3403)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-30V ID =-2.6 A (VGS =-10V) RDS(ON) 115m (VGS =-10V)1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 150m (VGS =-4.5V)+0.11.9-0.2 RDS(ON) 200m (VGS =-2.5V)DD1. Gate2. Source3. DrainGGSS Absolut

RUMWUMW AO3403A30V P-Channel MOSFETGeneral Description SOT23 The AO3403 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device issuitable for use as a load switch or in PWM applications.Product Summary1. GATE VDS-30V2. SOURCE ID (at VGS=-10V) -2.6A3. DRAIN RDS(ON) (at VGS=-10V)

AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

AO340730V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I 4.1A

AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

AO340030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

AO3400N-Channel 30V(D-S) MOSFETDESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 1

AO340930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3409 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=-10V) -2.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=-10V)

AO340730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -4.1Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO340230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3402 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=10V)

AO340630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3406 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 3.6Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO3400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

AO3400C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

AO3401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0Agate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)

AO3407A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO340430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3404 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5Abe used as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

AO3404AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3404A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

AO340030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.8Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

AO3405P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3405 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3409AO3409P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3409 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) and low gate charge. This ID = -2.6 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407AO3407P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3407 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -4.1 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402AO3402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3402 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 4 Aoperation with gate voltages as low as 2.5V. This RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3406AO3406N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3406 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 3.6A (VGS = 10V)device is suitable for use as a load switch or in PWM RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3404AO3404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3404 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. This ID = 5.8A (VGS = 10V)device may be used as a load switch or in PWM RDS(ON)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400AO3400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3400 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)

AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)1 2RDS(ON) 28 m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2DRDS(ON) 43 m (VGS = 4.5V)1. Gate2. SourceG3. DrainSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain

SMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorAO3409 (KO3409)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -2.6 A (VGS = -10V)1 2RDS(ON)

SMD Type MOSFETP-Channel Enhancement MOSFETAO3401 HF (KO3401 HF)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain A

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -4.1 A1 2RDS(ON) 52m (VGS = -10V)D +0.1+0.050.95 -0.1 0.1 -0.01+0.1RDS(ON) 87m (VGS = -4.5V) 1.9 -0.11.Base1. Gate2.Emitter2. SourceG 3. Drain3.collectorS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorAO3402 (KO3402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVDS (V) = 30VID = 4 A1 2+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 70m (VGS = 4.5V)RDS(ON) 110m (VGS = 2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximu

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3402 (KO3402)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS (V) = 30V3ID = 4 ARDS(ON) 55m (VGS = 10V)RDS(ON) 70m (VGS = 4.5V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1RDS(ON) 110m (VGS = 2.5V)+0.11.9 -0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3400(AO3400)SOT-23Unit: mm+0.1Features 2.9-0.1+0.10.4-0.1VDS (V) = 30V3ID =5.8 A(VGS =10V)RDS(ON) 28m (VGS = 10V)12RDS(ON) 33m (VGS =4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 52m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maxim

SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V)1 2 RDS(ON) 26.5m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 32m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)1. Gate2. Source3. DrainDDG GSS Absolute

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3400 (KO3400)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4-0.13VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1RDS(ON) 52m (VGS = 2.5V) D+0.11.9 -0.21. Gate2. SourceGS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolu

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings T

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3402 (KO3402)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4 -0.1VDS (V) = 30V3ID = 4 ARDS(ON) 55m (VGS = 10V)RDS(ON) 70m (VGS = 4.5V)1 2+0.02+0.10.15 -0.02D 0.95 -0.1RDS(ON) 110m (VGS = 2.5V)+0.11.9 -0.21. GateG2. SourceS3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 48m (VGS =-10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETP-Channel Enhancement MOSFETAO3409 (KO3409)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features 3VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404) 3FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)12RDS(ON) 28 m (VGS =10V) RDS(ON) 43 m (VGS =4.5V) D G SAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

SMD Type MOSFETN-Channel MOSFETAO3404A (KO3404A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2 RDS(ON) 25m (VGS = 10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 35m (VGS = 4.5V)1.9 -0.2D 1. Gate2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFET AO3404 (KO3404)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = 30VID =5.8 A (VGS=10V)RDS(ON) 28 m (VGS = 10V)1 2+0.1+0.050.95 -0.1D 0.1 -0.01RDS(ON) 43 m (VGS = 4.5V)+0.11.9 -0.11.Base1. Gate2.Emitter2. SourceG3. Drain3.collectorSAbsolute Maximum Ratings Ta = 25Paramet

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 50m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 60m (VGS =-4.5V)1.9 -0.2 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) RDS(ON) 26.5m (VGS = 10V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 32m (VGS = 4.5V)+0.11.9 -0.2 RDS(ON) 48m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absol

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3407 HF (KO3407 HF)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type MOSFETN-Channel MOSFETAO3404A (KO3404A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.8 A (VGS = 10V)1 2+0.1+0.05 RDS(ON) 25m (VGS = 10V)0.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 35m (VGS = 4.5V)1. GateD2. Source3. DrainGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rat

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3402(AO3402)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesVDS (V) = 30VID =4A12+0.1+0.05RDS(ON) 55m (VGS = 10V) 0.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 70m (VGS =4.5V)RDS(ON) 110m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum Ratings T

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorAO3400 (KO3400)SOT-23Unit: mm+0.1Features 2.9 -0.1+0.10.4 -0.1VDS (V) = 30V3ID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 52m (VGS = 2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAb

AO3407G P-CHANNEL MOSFET/P MOS Purpose:This device is suitable for use as a load switch or in PWM applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V DS I (T =25) -4.1 A D a I (T =70) -3.5 A D aI -20 A DMV 20 V GS P (

RUMWUMW AO3400AUMW AO3400AN-Channel Enhancement ModeFeaturesSOT23 VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 33m (VGS = 4.5V)RDS(ON) 52m (VGS = 2.5V)1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 12 VContinuous Drain Current TA=25 5.8ID

RUMWUMW AO3409AUMW AO3409AFeaturesSOT23 VDS (V) = -30VID = -2.6 A (VGS = -10V)RDS(ON)

RUMWpeUMW AO3401AUMW AO3401AM SFETSMD TyP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V)1. GATE 2. SOURCE 3. DRAIN DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V

RUMWUMW AO3407AUMW AO3407AUMW AO3407AP-Channel Enhancement MOSFETFeaturesSOT23 VDS (V) = -30VID = -4.1 ARDS(ON) 52m (VGS = -10V)RDS(ON) 87m (VGS = -4.5V)1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current Ta = 25 -4.1

RUMW UMW AO3402AN-Channel MOSFETUMW AO3402AID V(BR)DSS RDS(on)MAX SOT-23 55 m@10V30V 4Am70 @4.5V110m@2.5VDESCRIPTION 1. GATE The 3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM applicat

RUMWUMW AO3404AUMW AO3404AUMW AO3404AN-Channel Enhancement MOSFETSOT23 FeaturesVDS (V) = 30VID =5.8 A (VGS=10V)RDS(ON) 28 m (VGS = 10V)RDS(ON) 43 m (VGS = 4.5V)1. GATE 2. SOURCE MARKING3. DRAIN DA49TGSAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Ta=25 5.8 Continuou

AO3400AMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV 30 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous) 5.8 AIDDrain Current (pulsed) I 30 ADMTotal Device Dissipat

AO3401AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +12Drain Current (continuous)I -4.2 ADDrain Current (pulsed) I ADM-18Total Device D

Plastic-Encapsulate MosfetsAO3407FEATURESP-Channel MOSFETThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device issuitable for use as a load switch or in PWM applications.DD1.Gate2.SourceSOT-23GG3.DrainSSAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage

AO3402LOW VOLTAGE MOSFET (N-CHANNEL)FEATURES Ultra low on-resistance:V =30V,R 52m@V =10V,I =4ADS DS(ON) GS D For PWM application For Load switch application Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T

Plastic-Encapsulate MosfetsAO3401P-Channel MOSFETFEATURESHigh dense cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capabilityD 1.Gate2.SourceSOT-233.DrainG S MARKING:A19TMaximum ratings ( Ta=25 unless otherwise noted) UnitParameter Symbol Value Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 12 VContinuous

Plastic-Encapsulate MosfetsAO3404FEATURESN-Channel MOSFETThe AO3404 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device maybe used as a load switch or in PWM applications.D D1.Gate2.SourceSOT-233.DrainG GS SAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Value UnitDrain-source voltage VDS 3

Plastic-Encapsulate MosfetsAO3400FEATURESN-Channel MOSFETThe AO3400 is the N-Channel logic enhancement mode powerfield effect transistor is produced using high cell density, DMOStrench technology.This high-density process is especially tailored to minimize on-stateresistance. These devices are particularly suited for low voltage applicationsuch as cellular phone and notebook c

AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve

AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv

AO3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description The AO3407A is the high cell density trenched P-V -30 V DSch MOSFETs, which provides excellent RDSON R 47 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I -4 A DThe AO3407A meet the RoHS and Green Product requirement with full function reliability a

AO3407 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel Advanced Power MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 43m@ -10V 1. GATE - 4.1A -30V 2. SOURCE 66m@ -4.5V 1 3. DRAIN 2 FEATURE APPLICATIONLow RDS(on) @VGS=-10V Load Switch-5V Logic Level ControlSwitching circuitsHigh-speed line driverPower Management FunctionsM

AO3402SOT-23 Plastic-Encapsulate MOSFETS30V N-Channel MOSFETSOT-23 ID V(BR)DSS RDS(on)MAX 3m@10V28 5A30Vm34 @4.5V1. GATE 2. SOURCE 13. DRAIN2FeaturesLead free product is acquiredSurface mount package Equivalent circuitMARKING D A29TG S PACKAGE SPECIFICATIONSReel DIA. Q'TY/Reel Box Size QTY/Box Carton Size Q'TY/CartonPackageReel

AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 44m@-10V 1. GATE -4.2A -30V 2. SOURCE 51m@4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing SwitchingExceptional on-resistance and maximum DC current capabilityMARKING Equivalen

www.msksemi.comAO3400MI-MSSemiconductor CompianceSOT-23FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability1. GATE2. SOURCEAPPLICATION3. DRAIN Load/Power Switching Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D35m@ 10V40m@4.5V30 V5.8A52m@2.5VMaximum ratin

www.msksemi.comAO3401MI-MSSemiconductor CompianceFEATURESOT-23-33 High dense cell design for extremely low R .DS(ON) Exceptional on-resistance and maximum DC currentcapability1. GATE 12APPLICATION2. SOURCE Load/Power Switching3. DRAIN Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D65m@-10V75m@-4.5V-30 V-4.2A90m@-2.5V

AO3407 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I -4.1A

AO3402 30V N-Channel Enhancement Mode MOSFETVDS (V) = 30VID = 4 ARDS(ON)

AO3401 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

AO3404 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3400 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3407P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -30V/-4.1A, R =80m(MAX) @V = -10V.DS(ON) GS R = 100m(MAX) @V = -4.5V. . DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSC-59 for Surface Mount PackageSOT-59Applications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless Ot

AO3402N-Channel Enhancement Mode MOSFETFeature30V/4.2A RDS(ON) = 50m(MAX) @VGS = 10V.DS(ON) GSR =60m(MAX) @V = 4.5V.DS(ON) .Super High dense cell design for extremely low RReliable and Rugged.for Surface Mount Package.SC-59SC-59Applications Power ManagementPortable Equipment and Battery Powered Systems.TA=25Unless Otherwise notedAbsolute Maximum Ratin

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m(MAX) @VGS = -10V. = RDS(ON) = 70m(MAX) @VGS = -4.5V. GS RDS(ON) =120m(MAX) @VGS = -2.5V. GSSuper High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications

N-Channel Enhancement Mode MOSFET Feature SC-59 30V/5.8A, RDS(ON) = 35m(MAX) @VGS = 10V. 3 RDS(ON) =40m(MAX) @VGS = 4.5V. RDS(ON) =55m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . 2 Reliable and Rugged. 1 SC-59 for Surface Mount Package. Applications 1Gate 2Source 3Drain Power Management Portable Equipment and

AO3401P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L90 m@-4.5V-20VA-3110 m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING : A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V

AO3407SI2305AO3401SI2301SOT-23 Plastic-Encap sulate MOSFETSP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorSI2301General Description The BC3407 uses advanced trench techno

AO3402AO3402AO3402AO3402SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorAO3400AO3400AO3400AO3400AO3400 FEATURES APPLI

SI2305AO3401AO3401AO3401SOT-23 Plastic-Encapsulate MOSFETS FEATURES

AO3400AO3400AO3400AO3400SI2305SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorAO3400AO3400AO3400AO3400AO3400FEATURE High dense cell design for extremely low RDS(ON) Excepti

AO3407www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AO3401www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AO3401Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AO3404www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

AO3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1