AO3407A Datasheet and Replacement

AO3407A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2+0.1+0.050.95 -0.1 RDS(ON) 48m (VGS =-10V) 0.1 -0.01+0.11.9 -0.1 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Parameter Sy

RUMWUMW AO3407AUMW AO3407AUMW AO3407AP-Channel Enhancement MOSFETFeaturesSOT23 VDS (V) = -30VID = -4.1 ARDS(ON) 52m (VGS = -10V)RDS(ON) 87m (VGS = -4.5V)1. GATE 2. SOURCE D 3. DRAIN G S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current Ta = 25 -4.1

AO3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description The AO3407A is the high cell density trenched P-V -30 V DSch MOSFETs, which provides excellent RDSON R 47 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I -4 A DThe AO3407A meet the RoHS and Green Product requirement with full function reliability a

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

SMD Type MOSFETP-Channel MOSFETAO3407A (KO3407A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-4.3 A (VGS =-10V)1 2 RDS(ON) 48m (VGS =-10V)+0.02+0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 78m (VGS =-4.5V)1. Gate2. Source3. DrainDDGGSS Absolute Maximum Ratings Ta = 25Paramete

AO340730V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I 4.1A

AO340730V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is ID (at VGS=10V) -4.1Asuitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407AO3407P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3407 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -4.1 A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1Features3VDS (V) = -30VID = -4.1 A1 2RDS(ON) 52m (VGS = -10V)D +0.1+0.050.95 -0.1 0.1 -0.01+0.1RDS(ON) 87m (VGS = -4.5V) 1.9 -0.11.Base1. Gate2.Emitter2. SourceG 3. Drain3.collectorS Absolute Maximum Ratings Ta = 25Parameter Sy

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFETAO3407 HF (KO3407 HF)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET AO3407 (KO3407)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13FeaturesVDS (V) = -30VID = -4.1 A1 2+0.02+0.10.15 -0.02RDS(ON) 52m (VGS = -10V) 0.95 -0.1D 1.9+0.1-0.2RDS(ON) 87m (VGS = -4.5V)1. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sourc

AO3407G P-CHANNEL MOSFET/P MOS Purpose:This device is suitable for use as a load switch or in PWM applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V DS I (T =25) -4.1 A D a I (T =70) -3.5 A D aI -20 A DMV 20 V GS P (

Plastic-Encapsulate MosfetsAO3407FEATURESP-Channel MOSFETThe AO3407 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. This device issuitable for use as a load switch or in PWM applications.DD1.Gate2.SourceSOT-23GG3.DrainSSAbsolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage

AO3407 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel Advanced Power MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 43m@ -10V 1. GATE - 4.1A -30V 2. SOURCE 66m@ -4.5V 1 3. DRAIN 2 FEATURE APPLICATIONLow RDS(on) @VGS=-10V Load Switch-5V Logic Level ControlSwitching circuitsHigh-speed line driverPower Management FunctionsM

AO3407 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , VDS(ON) gs@-10V, I -4.1A

AO3407P-Channel Enhancement Mode MOSFETFeatureDS(ON) GS -30V/-4.1A, R =80m(MAX) @V = -10V.DS(ON) GS R = 100m(MAX) @V = -4.5V. . DS(ON) Super High dense cell design for extremely low R Reliable and RuggedSC-59 for Surface Mount PackageSOT-59Applications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless Ot

AO3407SI2305AO3401SI2301SOT-23 Plastic-Encap sulate MOSFETSP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorP-Channel Enhancement Mode Field Effect TransistorSI2301General Description The BC3407 uses advanced trench techno

AO3407www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)