All MOSFET. AO3422 Datasheet

 

AO3422 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO3422

SMD Transistor Code: AR9TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 2.1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 2.4 nS

Drain-Source Capacitance (Cd): 31 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: SOT23-3

AO3422 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3422 Datasheet (PDF)

1.1. ao3422.pdf Size:177K _aosemi

AO3422
AO3422

AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to VDS (V) = 55V provide excellent RDS(ON) and low gate charge. It offers ID = 2.1A (VGS = 4.5V) operation over a wide gate drive range from 2.5V to RDS(ON) < 160mΩ (VGS = 4.5V) 12V. This device is suitable for use as a load switch. RDS(ON) < 200mΩ

1.2. ao3422.pdf Size:963K _kexin

AO3422
AO3422

SMD Type MOSFET N-Channel MOSFET AO3422 (KO3422) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 55V ● ID = 2.1 A (VGS = 4.5V) ● RDS(ON) < 160mΩ (VGS = 4.5V) 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 ● RDS(ON) < 200mΩ (VGS = 2.5V) 1.9+0.1 -0.1 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rat

 1.3. ao3422-3.pdf Size:1076K _kexin

AO3422
AO3422

SMD Type MOSFET N-Channel MOSFET AO3422 (KO3422) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 55V ● ID = 2.1 A (VGS = 4.5V) ● RDS(ON) < 160mΩ (VGS = 4.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) < 200mΩ (VGS = 2.5V) +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symb

1.4. ao3422.pdf Size:256K _shenzhen-tuofeng-semi

AO3422
AO3422

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3422 AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to VDS (V) = 55V provide excellent RDS(ON) and low gate charge. It ID = 2.1A (VGS = 4.5V) offers operation over a wide gate drive range from RDS(ON) < 155mΩ (VGS = 4.5V) 2.5V to 12V. This device

Datasheet: AO3415 , AO3415A , AO3416 , AO3418 , AO3419 , AO3420 , AO3421 , AO3421E , BUZ90A , AO3423 , AO3424 , AO3434 , AO3434A , AO3435 , AO3438 , AO3442 , AO3460 .

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