All MOSFET. AO4202 Datasheet

 

AO4202 Datasheet and Replacement


   Type Designator: AO4202
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: SO-8
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AO4202 Datasheet (PDF)

 ..1. Size:274K  aosemi
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AO4202

AO420230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4202 uses Trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 19Afrequency switching performance. Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:1632K  kexin
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AO4202

SMD Type MOSFETN-Channel MOSFETAO4202 (KO4202)SOP-8 Features VDS (V) = 30V ID = 19 A (VGS = 10V)1.50 0.15 RDS(ON) 5.3m (VGS = 10V) RDS(ON) 7m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-

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History: LSF65R570GT | CSD16342Q5A

Keywords - AO4202 MOSFET datasheet

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