AO4240 MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 11.5 nS
Cossⓘ - Output Capacitance: 1170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: SO-8
AO4240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4240 Datasheet (PDF)
ao4240.pdf
AO424040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AO4240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 24Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4240.pdf
SMD Type MOSFETN-Channel MOSFETAO4240 (KO4240)SOP-8 Features VDS (V) = 40V ID = 24 A (VGS = 10V) RDS(ON) 3.3m (VGS = 10V)1.50 0.15 RDS(ON) 4.3m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gat
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