AO4314 Datasheet and Replacement
Type Designator: AO4314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 36 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 465 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SO-8
AO4314 substitution
AO4314 Datasheet (PDF)
ao4314.pdf
AO431436V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4314 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 20Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4314.pdf
SMD Type MOSFETN-Channel MOSFETAO4314 (KO4314)SOP-8 Features VDS (V) = 36V1.50 0.15 ID = 20 A (VGS = 10V) RDS(ON) 6m (VGS = 10V) RDS(ON) 8.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 36
ao4312.pdf
AO431236V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4312 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 23Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
ao4310.pdf
AO431036V N-Channel MOSFETGeneral Description Product SummaryVDS36VThe AO4310 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 27Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
Datasheet: AO4264 , AO4266 , AO4286 , AO4292 , AO4302 , AO4304 , AO4310 , AO4312 , IRF540N , AO4354 , AO4402 , AO4403 , AO4404B , AO4405 , AO4406A , AO4407 , AO4407A .
History: IPB60R099C6
Keywords - AO4314 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: IPB60R099C6
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