AO4415 Datasheet and Replacement

AO441530V P-Channel MOSFETGeneral Description Product SummaryThe AO4415 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -8 A (VGS = -20V)charge. This device is suitable for use as a loadRDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4415 (KO4415)SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-20V) RDS(ON) 26m (VGS =-20V)1.50 0.15 RDS(ON) 35m (VGS =-10V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-S

AO441130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4411 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

AO441030V N-Channel MOSFETGeneral Description Product SummaryThe AO4410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunity,ID = 18A (VGS = 10V)body diode characteristics and ultra-low gateRDS(ON)

AO441930V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4419 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -9.7Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO441330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO4413 uses advanced trench technology to provideexcellent RDS(ON), and ultra-low low gate charge with a ID (at VGS=-20V) -15A25V gate rating. This device is suitable for use as a load RDS(ON) (at VGS=-20V)

SMD Type MOSFETP-Channel MOSFETAO4411 (KO4411)SOP-8 Features VDS (V) =-30V ID =-8 A (VGS =-10V) RDS(ON) 32m (VGS =-10V)1.50 0.15 RDS(ON) 55m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-

SMD Type MOSFETN-Channel MOSFETAO4410 (KO4410)SOP-8 Features VDS (V) = 30V ID = 18 A (VGS = 10V) RDS(ON) 5.5m (VGS = 10V)1.50 0.15 RDS(ON) 6.2m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gat

SMD Type MOSFETP-Channel MOSFETAO4419 (KO4419)SOP-8 Features VDS (V) =-30V ID =-9.7 A (VGS =-10V)1.50 0.15 RDS(ON) 20m (VGS =-10V) RDS(ON) 35m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gat

SMD Type MOSFETN-Channel MOSFETAO4418 (KO4418)SOP-8 Features VDS (V) = 30V ID = 11.5 A (VGS = 20V) RDS(ON) 14m (VGS = 20)1.50 0.15 RDS(ON) 17m (VGS = 10V) RDS(ON) 40m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit D

SMD Type MOSFETP-Channel MOSFETAO4413 (KO4413)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V)1.50 0.15 RDS(ON) 7m (VGS =-20V) RDS(ON) 8.5m (VGS =-10V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDDGGSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30

AO4411www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DTop Vi

AO4419www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 DG