AO4423 Datasheet and Replacement

AO442330V P-Channel MOSFETGeneral Description Product SummaryThe AO4423 uses advanced trench technology to provide VDS (V) = -30Vexcellent RDS(ON), and ultra-low low gate charge with a ID = -17A (VGS = -20V)25V gate rating. This device is suitable for use as a load RDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4423 (KO4423)SOP-8 Features VDS (V) =-30V ID =-15 A (VGS =-20V) RDS(ON) 7m (VGS =-20V)1.50 0.15 RDS(ON) 8.5m (VGS =-10V) RDS(ON) 12 m (VGS =- 6 V)1 Source 5 Drain ESD Rating: 3000V HBM6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Par

AO4423www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S

AO442730V P-Channel MOSFETGeneral Description Product SummaryThe AO4427 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), and ultra-low low gateID = -12.5 A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

AO442030V N-Channel MOSFETGeneral Description Product SummaryThe AO4420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

AO442538V P-Channel MOSFETGeneral Description Product SummaryThe AO4425 uses advanced trench technology to VDS (V) = -38Vprovide excellent RDS(ON), and ultra-low low gateID = -14A (VGS = -20V)charge with a 25V gate rating. This device is suitableRDS(ON)

AO442160V P-Channel MOSFETGeneral Description Product SummaryVDSThe AO4421 combines advanced trench MOSFET -60Vtechnology with a low resistance package to provide ID (at VGS=-10V) -6.2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

AO4420A30V N-Channel MOSFETGeneral Description Product SummaryThe AO4420A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)

SMD Type MOSFETP-Channel MOSFETAO4427 (KO4427)SOP-8 Features VDS (V) =-30V ID =-12.5 A (VGS =-20V) RDS(ON) 12m (VGS =-20V)1.50 0.15 RDS(ON) 14m (VGS =-10V) ESD Rating: 2000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-So

SMD Type MOSFETN-Channel MOSFETAO4420 (KO4420)SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V)1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G

SMD Type MOSFETP-Channel MOSFETAO4425 (KO4425)SOP-8 Features VDS (V) =-38V ID =-14 A (VGS =-20V) RDS(ON) 10m (VGS =-20V)1.50 0.15 RDS(ON) 11m (VGS =-10V) ESD Rating: 3000V HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

SMD Type MOSFETP-Channel MOSFETAO4421 (KO4421)SOP-8 Features VDS (V) =-60V ID =-6.2 A (VGS =-10V) RDS(ON) 40m (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gat

AO4420www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8