AO4480 Datasheet and Replacement

AO448040V N-Channel MOSFETGeneral Description Product SummaryThe AO4480 uses advanced trench technology to VDS (V) = 40Vprovide excellent RDS(ON), low gate charge. It is ESDID = 14A (VGS = 10V)Protected. This device is suitable for use as a low sideRDS(ON)

SMD Type MOSFETN-Channel MOSFETAO4480 (KO4480)SOP-8 Unit:mm Features VDS (V) = 40V ID = 14 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 15.5m (VGS = 4.5V) ESD Rating: 4KV HBM1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

AO4480www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.012 at VGS = 10 V TrenchFET Power MOSFET1240 15 nC 100 % Rg Tested0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/ECAPPLICATIONS Synchronous Rectificat

AO4482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4482 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

AO448830V N-Channel MOSFETGeneral Description Product SummaryThe AO4488 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) with low gate charge.ID = 20A (VGS = 10V)This device is ESD protected and it is suitable forRDS(ON)

AO448540V P-Channel MOSFETGeneral Description Product SummaryThe AO4485 uses advanced trench technology to VDS (V) = -40Vprovide excellent RDS(ON) with low gate charge. ThisID = -10A (VGS = -10V)device is suitable for use as a DC-DC converterRDS(ON)

AO448440V N-Channel MOSFETGeneral Description Product SummaryThe AO4484 uses advanced trench technology to VDS (V) = 40Vprovide excellent RDS(ON) with low gate charge. This isID = 10A (VGS = 10V)an all purpose device that is suitable for use in a wideRDS(ON)

AO4486100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AO4486 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 4.2Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

SMD Type MOSFETN-Channel MOSFETAO4482 (KO4482)SOP-8 Unit:mm Features VDS (V) = 100V ID = 6 A (VGS = 10V) RDS(ON) 37m (VGS = 10V)1.50 0.15 RDS(ON) 42m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 100

SMD Type MOSFETN-Channel MOSFETAO4488 (KO4488)SOP-8 Unit:mm Features VDS (V) = 30V ID = 20 A (VGS = 10V)1.50 0.15 RDS(ON) 4.6m (VGS = 10V) RDS(ON) 6.4m (VGS = 4.5V) ESD Rating: 2KV HBM 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady Sta

SMD Type MOSFETP-Channel MOSFETAO4485 (KO4485)SOP-8 Unit:mm Features VDS (V) =-40V ID =-10 A (VGS =-10V)1.50 0.15 RDS(ON) 15m (VGS =-10V) RDS(ON) 20m (VGS =-4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

SMD Type MOSFETN-Channel MOSFETAO4484 (KO4484)SOP-8 Unit:mm Features VDS (V) = 40V ID = 10 A (VGS = 10V)1.50 0.15 RDS(ON) 10m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol 10 Sec Steady State Unit Drain-Source Volt

SMD Type MOSFETN-Channel MOSFETAO4486 (KO4486)SOP-8 Unit:mm Features VDS (V) = 100V ID = 4.2 A (VGS = 10V)1.50 0.15 RDS(ON) 79m (VGS = 10V) RDS(ON) 90m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateD DG GSS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt