AO4622 Specs and Replacement

Type Designator: AO4622

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16(12) V

|Id| ⓘ - Maximum Drain Current: 7.3(5) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2(7.6) nS

Cossⓘ - Output Capacitance: 162(131) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023(0.053) Ohm

Package: SO-8

AO4622 substitution

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AO4622 datasheet

 ..1. Size:251K  aosemi
ao4622.pdf pdf_icon

AO4622

AO4622 20V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4622 uses advanced trench technology VDS (V) = 20V -20V MOSFETs to provide excellent RDS(ON) and low gate ID = 7.3A (VGS=4.5V) -5A (VGS=-4.5V) charge. The complementary MOSFETs may be used RDS(ON) RDS(ON) to form a level shifted high side switch, and for a ... See More ⇒

 ..2. Size:1949K  kexin
ao4622.pdf pdf_icon

AO4622

SMD Type MOSFET Complementary Trench MOSFET AO4622 (KO4622) SOP-8 Unit mm Features N-Channel VDS (V) = 20V ID = 7.3 A (VGS = 4.5V) 1.50 0.15 RDS(ON) 23m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S1 5 D2 RDS(ON) 84m (VGS = 2.5V) 6 D2 2 G1 7 D1 3 S2 P-Channel 8 D1 4 G2 VDS (V) = -20V ID = -5 A (VGS = -4.5V) RDS(ON) 53m (VGS = -10V... See More ⇒

 9.1. Size:849K  aosemi
ao4629.pdf pdf_icon

AO4622

AO4629 30V Complementary MOSFET General Description Product Summary AO4629 uses advanced trench technology to provide N-Channel P-Channel excellent RDS(ON) and low gate charge. This VDS= 30V -30V complementary N and P channel MOSFET configuration is ID= 6A (VGS=10V) -5.5A (VGS=-10V) ideal for low Input Voltage inverter applications. RDS(ON) RDS(ON) ... See More ⇒

 9.2. Size:301K  aosemi
ao4620.pdf pdf_icon

AO4622

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology n-channel p-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 30V -30V charge. The complementary MOSFETs may be used ID = 7.2A (VGS=10V) -5.3A (VGS = -10V) in inverter and other applications. RDS(ON) RDS(ON) ... See More ⇒

Detailed specifications: AO4606, AO4611, AO4612, AO4613, AO4614B, AO4616, AO4618, AO4620, IRFZ24N, AO4627, AO4629, AO4706, AO4710, AO4712, AO4714, AO4718, AO4720

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