FSS23A4D MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS23A4D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
Package: TO257AA
FSS23A4D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS23A4D Datasheet (PDF)
fss23a4.pdf
FSS23A4D,FSS23A4R7A, 250V, 0.460 Ohm, Rad Hard,June 1998 SEGR Resistant, N-Channel Power MOSFETsFeatures Description 7A, 250V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Si
fss23ao.pdf
FSS23AOD,S E M I C O N D U C T O RFSS23AORRadiation Hardened, SEGR ResistantFebruary 1998 N-Channel Power MOSFETsFeatures Description 9A, 200V, rDS(ON) = 0.330 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOSFET
fss239.pdf
Ordering number : ENN6582FSS239N-Channel Silicon MOSFETFSS239Load Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit : mm 2.5V drive.2185[FSS239]851 : No Contact2 : Source3 : Source140.24 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta=25CPar
fss238.pdf
Ordering number:ENN6401N-Channel Silicon MOSFETFSS238Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS238]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Symbol Con
fss234.pdf
Ordering number : ENN6865FSS234N-Channel Silicon MOSFETFSS234DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4.0V drive. 2116 Ultrahigh-speed switching.[FSS234]851 : Source2 : Source3 : Source140.2 4 : Gate5.05 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maxim
fss237.pdf
Ordering number:ENN6149N-Channel Silicon MOSFETFSS237Load Switching ApplicationsFeatures Package Dimensions Ultralow ON resistance.unit:mm 2.5V drive.2116[FSS237]8 51 : Source2 : Source14 3 : Source0.25.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta = 25CParameter Sym
fss232.pdf
Ordering number:ENN6359N-Channel Silicon MOSFETFSS232Load Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm 4V drive.2116[FSS232]8 51 : Source2 : Source140.23 : Source5.04 : Gate5 : Drain6 : Drain7 : Drain8 : Drain0.595 1.270.43SANYO : SOP8SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Co
fss234.pdf
FSS234D, FSS234R6A, 250V, 0.600 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 6A, 250V, rDS(ON) = 0.600 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specifi- Total Dosecally designed for commercial and military space applications.- Meets Pre-RAD Specifications to 100K R
fss230.pdf
FSS230D, FSS230R8A, 200V, 0.440 Ohm, Rad Hard,SEGR Resistant, N-Channel Power MOSFETsJune 1998Features Description 8A, 200V, rDS(ON) = 0.440 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (S
Datasheet: FSS130D , FSS130R , FSS13AOD , FSS13AOR , FSS230D , FSS230R , FSS234D , FSS234R , IRF2807 , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD .
