All MOSFET. AO4884 Datasheet

 

AO4884 MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4884

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.7 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17.2 nS

Drain-Source Capacitance (Cd): 215 pF

Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm

Package: SO-8

AO4884 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4884 Datasheet (PDF)

1.1. ao4884.pdf Size:197K _aosemi

AO4884
AO4884

AO4884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) < 13mΩ power conversion applications. RDS(ON) (at VGS = 4.5V) < 16mΩ 100% UIS Tested 100%

1.2. ao4884.pdf Size:1076K _kexin

AO4884
AO4884

SMD Type MOSFET Dual N-Channel MOSFET AO4884 (KO4884) SOP-8 Unit:mm ■ Features ● VDS (V) = 40V ● ID = 10A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 13mΩ (VGS = 10V) ● RDS(ON) < 16mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gat

5.1. ao4882.pdf Size:343K _aosemi

AO4884
AO4884

AO4882 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AO4882 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 8A purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) < 19mΩ power conversion applications. RDS(ON) (at VGS=4.5V) < 27mΩ 100% UIS Tested 100% Rg

5.2. ao4886.pdf Size:550K _aosemi

AO4884
AO4884

AO4886 100V Dual N-Channel MOSFET General Description Product Summary VDS 100V The AO4886 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 3.3A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 80mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 4.5V) < 91mΩ telecom, industrial

5.3. ao4882.pdf Size:1390K _kexin

AO4884
AO4884

SMD Type MOSFET Dual N-Channel MOSFET AO4882 (KO4882) SOP-8 Unit:mm ■ Features ● VDS (V) = 40V 1.50 0.15 ● ID = 8A (VGS = 10V) ● RDS(ON) < 19mΩ (VGS = 10V) 1 S2 5 D1 ● RDS(ON) < 27mΩ (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-So

5.4. ao4886.pdf Size:2656K _kexin

AO4884
AO4884

SMD Type MOSFET N-Channel Enhancement MOSFET AO4886 (KO4886) ■ Features SOP-8 ● VDS (V) = 100V ● ID = 3.3A (VGS = 10V) ● RDS(ON) < 80mΩ (VGS = 10V) ● RDS(ON) < 91mΩ (VGS = 4.5V) 1.50 0.15 D1 D2 D1 D2 Top View Top View S2 1 8 D2 S2 1 8 D2 G2 D2 G2 D2 2 2 7 7 S1 3 6 D1 S1 3 6 D1 G1 4 5 D1 G1 G2 G1 4 5 D1 G1 G2 S1 S2 S1 S2 ■ Absolute Maximum Ratin

Datasheet: AO4838 , AO4840 , AO4842 , AO4850 , AO4852 , AO4854 , AO4862 , AO4882 , IRF3710 , AO4886 , AO4892 , AO4914 , AO4922 , AO4924 , AO4932 , AO4938 , AO4940 .

 


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