AO6401A Datasheet and Replacement

AO6401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -5Awith gate voltages as low as 2.5V. This device is suitable RDS(ON) (at VGS=-10V)

SMD Type MOSFETP-Channel MOSFETAO6401A (KO6401A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Ab

AO640130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -5Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

SMD Type MOSFETP-Channel MOSFETAO6401 (KO6401)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01+0.2-0.1DD1 Drain 4 Source2 Drain 5 Drain3 Gate 6 DrainGGSS Abso

SMD Type MOSFETP-Channel MOSFETAO6401-HF (KO6401-HF)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-5 A (VGS =-10V) RDS(ON) 47m (VGS =-10V) RDS(ON) 64m (VGS =-4.5V) 2 31+0.020.15 -0.02 RDS(ON) 85m (VGS =-2.5V) +0.01-0.01 Pb-Free Package May be Available. The G-Suffix Denotes a+0.2-0.1Pb-Free