AO6420 MOSFET Datasheet: N-Ch, 60V, 4.2A. Full specification with pinout and replacement list

AO6420 Specs and Replacement

Type Designator: AO6420

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TSOP-6

AO6420 substitution

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AO6420 datasheet

..1. Size:195K aosemi
ao6420.pdf pdf_icon

AO6420 60V N-Channel MOSFET General Description Product Summary The AO6420 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 4.2A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

..2. Size:1075K kexin
ao6420.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET AO6420 (KO6420) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 60V ID =4.2 A (VGS = 10V) RDS(ON) 60m (VGS = 10V) RDS(ON) 75m (VGS = 4.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

9.1. Size:220K aosemi
ao6422.pdf pdf_icon

AO6422 20V N-Channel MOSFET General Description Product Summary The AO6422 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 5A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒

9.2. Size:324K aosemi
ao6424.pdf pdf_icon

AO6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V) ... See More ⇒