AO6422 MOSFET Datasheet: N-Ch, 20V, 3.9A. Full specification with pinout and replacement list

AO6422 Specs and Replacement

   Type Designator: AO6422
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TSOP-6

AO6422 substitution

- MOSFET ⓘ Cross-Reference Search

AO6422 datasheet

..1. Size:220K aosemi
ao6422.pdf pdf_icon

AO6422 20V N-Channel MOSFET General Description Product Summary The AO6422 uses advanced trench technology to VDS = 20V provide excellent RDS(ON), low gate charge and ID = 5A (VGS = 4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) ... See More ⇒

..2. Size:1794K kexin
ao6422.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET AO6422 (KO6422) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 44m (VGS = 4.5V) RDS(ON) 55m (VGS = 2.5V) 2 3 1 RDS(ON) 72m (VGS = 1.8V) +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 D 1 Drain 4 Source 2 Drain 5 Drain 3 Gate 6 Drain G S Absolute... See More ⇒

9.1. Size:324K aosemi
ao6424.pdf pdf_icon

AO6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO6424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may ID (at VGS=10V) 5A be used as a load switch or in PWM applications. RDS(ON) (at VGS=10V) ... See More ⇒

9.2. Size:254K aosemi
ao6424a.pdf pdf_icon

AO6424A 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 6.5A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒