AO6801A
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO6801A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.8
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 37
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.115
Ohm
Package:
TSOP-6
AO6801A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO6801A
Datasheet (PDF)
..1. Size:331K aosemi
ao6801a.pdf 
AO6801A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)
..2. Size:1239K kexin
ao6801a.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801A (KO6801A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 5 46 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1
..3. Size:1785K cn vbsemi
ao6801a.pdf
AO6801Awww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable App
8.1. Size:270K aosemi
ao6801.pdf
AO680130V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)
8.2. Size:303K aosemi
ao6801e.pdf
AO6801E30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AO6801E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
8.3. Size:1386K kexin
ao6801.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801 (KO6801)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V) +0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1
8.4. Size:1879K kexin
ao6801e.pdf
SMD Type MOSFETDual P-Channel MOSFETAO6801E (KO6801E)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V)2 31 RDS(ON) 185m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01 ESD Rating: 2000V HBM+0.2-0.1D1 D2 1 Gate1 4 Drain22 Source2 5 S
Datasheet: AO6424
, AO6424A
, AO6432
, AO6601
, AO6602
, AO6604
, AO6800
, AO6801
, IRF2807
, AO6801E
, AO6802
, AO6804A
, AO6808
, AO6810
, AO7400
, AO7401
, AO7403
.
