AO7414 MOSFET Datasheet: N-Ch, 20V, 2A. Full specification with pinout and replacement list

AO7414 Specs and Replacement

Type Designator: AO7414

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm

Package: SC70-3

AO7414 substitution

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AO7414 datasheet

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AO7414 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC AP... See More ⇒

9.1. Size:209K aosemi
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AO7417 20V P-Channel MOSFET General Description Product Summary VDS The AO7417 uses advanced trench technology to provide -20V excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2A voltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V) ... See More ⇒

9.2. Size:213K aosemi
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AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V) ... See More ⇒