AO7417 MOSFET Datasheet: P-Ch, 20V, 1.9A. Full specification with pinout and replacement list

AO7417 Specs and Replacement

Type Designator: AO7417

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SC70-6

AO7417 substitution

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AO7417 datasheet

..1. Size:209K aosemi
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AO7417 20V P-Channel MOSFET General Description Product Summary VDS The AO7417 uses advanced trench technology to provide -20V excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -2A voltages as low as 1.5V, in the small SOT363 footprint. RDS(ON) (at VGS=-4.5V) ... See More ⇒

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9.2. Size:213K aosemi
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AO7413 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -1.4A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V) ... See More ⇒

9.3. Size:213K aosemi
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AO7415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO7415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -2A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= -10V) ... See More ⇒